Passively mode-locked diode-pumped surface-emitting semiconductor laser

A surface-emitting semiconductor laser has been passively mode locked in an external cavity incorporating a semiconductor saturable absorber mirror. The gain medium consists of a stack of 12 InGaAs-GaAs strained quantum wells, grown above a Bragg mirror structure, and pumped optically by a high-brig...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 12; no. 9; pp. 1135 - 1137
Main Authors Hoogland, S., Dhanjal, S., Tropper, A.C., Roberts, J.S., Haring, R., Paschotta, R., Morier-Genoud, F., Keller, U.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.09.2000
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Emittance
Gain
Holes
Laser excitation
Laser mode locking
Lasers
Mirrors
Optical pumping
Pump lasers
Quantum well lasers
Quantum wells
Semiconductor diodes
Semiconductor lasers
Semiconductors
Stacks
Stimulated emission
Surface emitting lasers
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Summary:A surface-emitting semiconductor laser has been passively mode locked in an external cavity incorporating a semiconductor saturable absorber mirror. The gain medium consists of a stack of 12 InGaAs-GaAs strained quantum wells, grown above a Bragg mirror structure, and pumped optically by a high-brightness diode laser. The mode-locked laser emits pulses of 22-ps full-width at half maximum duration at 1030 nm, with a repetition rate variable around 4.4 GHz.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/68.874213