FACl as a Bifunctional Additive to Enhance the Performance of Lead-Free Antimony-Based Perovskite Solar Cells

Lead halide perovskite solar cells (PSCs) have shown tremendous progress in the last few years. However, highly toxic Pb and its instability have restricted their further development. On the other hand, antimony-based perovskites such as cesium antimony iodide (Cs3Sb2I9) have shown high stability bu...

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Published inMicromachines (Basel) Vol. 16; no. 4; p. 379
Main Authors Gao, Xinyu, Gao, Zihao, Sun, Zhen, Song, Ping, Feng, Xiyuan, Jin, Zhixin
Format Journal Article
LanguageEnglish
Published Switzerland MDPI AG 27.03.2025
MDPI
Subjects
Alcohol
Antimony
antimony-based perovskite solar cells
buried interface
Carrier recombination
Cesium
Cs3Sb2I9
Current carriers
Efficiency
Electromagnetic absorption
Energy conversion efficiency
Fourier transforms
Hydrochloric acid
Lead compounds
Lead free
Liu, Timothy
Metal halides
Morphology
Performance enhancement
Perovskite
Perovskites
Photoelectric effect
Photovoltaic cells
Solar batteries
Solar cells
Spectrum analysis
Toxicity
Transient photovoltage
Massachusetts
China
Beijing China
Scotland
United Kingdom > UK
United States > US
Cs3Sb2I9
buried interface
antimony-based perovskite solar cells
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Summary:Lead halide perovskite solar cells (PSCs) have shown tremendous progress in the last few years. However, highly toxic Pb and its instability have restricted their further development. On the other hand, antimony-based perovskites such as cesium antimony iodide (Cs3Sb2I9) have shown high stability but low power conversion efficiency (PCE) due to the limited transfer of photocarriers and the poor quality of films. Here, we present a novel method to improve the performance of Cs3Sb2I9 PSCs through a FACl-modified buried interface. FACl acts as a bi-functional additive, and FA incorporation enhances the crystallinity and light absorption of films. Furthermore, treatment with FACl optimizes the level position of Cs3Sb2I9. In addition, transient photovoltage and transient photocurrent were employed to confirm the reduction of charge recombination and superior carrier transportation. By using a planar device structure, we found the PCE of a FACl–Cs3Sb2I9-based device to be 1.66%. The device, stored for 2 months under N2 conditions, showed a negligible loss in PCE. Overall, this study provides a new strategy to further enhance the performance of Sb-based PSCs.
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ISSN:2072-666X
2072-666X
DOI:10.3390/mi16040379