Hole doping effect of MoS2 via electron capture of He+ ion irradiation

Abstract Beyond the general purpose of noble gas ion sputtering, which is to achieve functional defect engineering of two-dimensional (2D) materials, we herein report another positive effect of low-energy (100 eV) He + ion irradiation: converting n-type MoS 2 to p-type by electron capture through th...

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Published inScientific reports Vol. 11; no. 1; p. 23590
Main Authors Han, Sang Wook, Yun, Won Seok, Kim, Hyesun, Kim, Yanghee, Kim, D.-H., Ahn, Chang Won, Ryu, Sunmin
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group 08.12.2021
Nature Publishing Group UK
Nature Portfolio
Subjects
Crystals
Energy
Irradiation
Molybdenum disulfide
Semiconductors
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Summary:Abstract Beyond the general purpose of noble gas ion sputtering, which is to achieve functional defect engineering of two-dimensional (2D) materials, we herein report another positive effect of low-energy (100 eV) He + ion irradiation: converting n-type MoS 2 to p-type by electron capture through the migration of the topmost S atoms. The electron capture ability via He + ion irradiation is valid for supported bilayer MoS 2 ; however, it is limited at supported monolayer MoS 2 because the charges on the underlying substrates transfer into the monolayer under the current condition for He + ion irradiation. Our technique provides a stable and universal method for converting n-type 2D transition metal dichalcogenides (TMDs) into p-type semiconductors in a controlled fashion using low-energy He + ion irradiation.
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ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-021-02932-6