Advanced memory—Materials for a new era of information technology

• Published in: MRS bulletin Vol. 43; no. 5; pp. 330 - 333
• Main Authors: Hwang, Cheol Seong, Dieny, Bernard
• Format: Journal Article
• Language: English
• Published: New York, USA Cambridge University Press 01.05.2018; Springer International Publishing; Springer Nature B.V; Cambridge University Press (CUP)
• Subjects: Applied and Technical Physics; Architectural engineering; Characterization and Evaluation of Materials; Computer memory; Computers; Condensed Matter; Data storage; Energy Materials; Flash memory (computers); Information technology; Innovations; Market shares; Materials Engineering; Materials for Advanced Semiconductor Memories; Materials Science; Memory devices; Nanotechnology; Physics; Power consumption; Random access memory; Semiconductors; Technological change; Transistors; electronic material; memory; microelectronics
• ISSN: 0883-7694; 1938-1425
• DOI: 10.1557/mrs.2018.96

Material development has played a crucial role in modern civilization and IT. The importance of high-density and high-performance memory in modern computer systems and IT is ever increasing. This trend will be more obvious as computational architectures shift from being processing-centric to memory- (or data-) centric. The need for emerging and new memory technologies with nonvolatility and low power-consuming performance is rapidly increasing, while improvements in current dynamic random-access memory and NAND flash are being pursued. In both new and current memories, material innovation is of central importance. In this issue of MRS Bulletin, recent improvements in these two critical fields are reviewed with a focus on emerging and novel materials for the disruptive memory concept. Recent progress in scanning probe-based memory devices is also described.