Re-distribution of oxygen at the interface between γ-Al2O3 and TiN
Abstract Interface of TiN electrode with γ-Al 2 O 3 layers was studied using near edge X-ray absorption fine structure, conventional X-ray photoelectron spectroscopy and photoelectron spectroscopy with high energies. Despite the atomic-layer deposited Al 2 O 3 being converted into thermodynamically-...
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Published in | Scientific reports Vol. 7; no. 1; pp. 1 - 14 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
London
Nature Publishing Group
03.07.2017
Nature Publishing Group UK Nature Portfolio |
Subjects | |
Online Access | Get full text |
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Summary: | Abstract
Interface of TiN electrode with γ-Al
2
O
3
layers was studied using near edge X-ray absorption fine structure, conventional X-ray photoelectron spectroscopy and photoelectron spectroscopy with high energies. Despite the atomic-layer deposited Al
2
O
3
being converted into thermodynamically-stable polycrystalline cubic γ-phase by high-temperature (1000 or 1100 °C) anneal, our results reveal formation of a thin TiN
x
O
y
(≈1-nm thick) interlayer at the interface between γ-Al
2
O
3
film and TiN electrode due to oxygen scavenging from γ-Al
2
O
3
film. Formation of the TiO
2
was not observed at this interface. As environmental effect, a strong oxidation resulting in formation of a TiO
2
(1.4 nm)/TiN
x
O
y
(0.9 nm) overlayers on the top of the TiN electrode is traced. Development of O-deficiency of γ-Al
2
O
3
is observed and related to the polarization anisotropy due to the preferential orientation of spin states involved in the X-ray absorption in the plane parallel to the surface. Investigation of the TiN electrode reveals the predominantly “stretched” octahedra in its structure with the preferential orientation relative the interface with γ-Al
2
O
3
. This anisotropy can be correlated with ≈200 meV electron barrier height increase at the O-deficient TiN/γ-Al
2
O
3
interface as compared to the TiN/γ-Al
2
O
3
barrier formed under abundant oxidant supply condition as revealed by internal photoemission of electrons from TiN into the oxide. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 2045-2322 2045-2322 |
DOI: | 10.1038/s41598-017-04804-4 |