Effect of focus on verbal working memory: Critical role of the focus word in reading

• Published in: Memory & cognition Vol. 30; no. 4; pp. 562 - 571
• Main Authors: OSAKA, Mariko, NISHIZAKI, Yukiko, KOMORI, Mie, OSAKA, Naoyuki
• Format: Journal Article
• Language: English
• Published: Austin, TX Psychonomic Society 01.06.2002; Springer Nature B.V
• Subjects: Biological and medical sciences; Cognition & reasoning; Fundamental and applied biological sciences. Psychology; Human; Humans; Language; Learning. Memory; Memory; Production and perception of written language; Psychology. Psychoanalysis. Psychiatry; Psychology. Psychophysiology; Reading; Time Factors; Vocabulary; Human; Verbal memory; Reading; Word; Language; Interindividual comparison; Cognition; Memory span; Working memory; Experimental study
• ISSN: 0090-502X; 1532-5946
• DOI: 10.3758/bf03194957

The effect of focus on working memory was investigated with the reading span test (RST). In two experiments, the span scores and the number of intrusion errors were compared between the focused RST the and the nonfocused RST. Focus word was defined as the most important word for comprehending a sentence. For the focused RST, the target word to be maintained was the focus word for the sentence. In the nonfocused RST, however, the target word was not the focus word for the sentence. The results of both experiments showed that RST span scores were higher for the focused RST than for the nonfocused RST, and intrusion errors were found to increase for the nonfocused RST. In Experiment 2, the effect of focus was compared between high-span and low-span subjects. An effect of sentence length was also investigated. The result showed that low-span subjects were more affected than were high-span subjects by whether the word to be remembered was the focus word. The effect of sentence length was not confirmed. These findings suggest that the low-span subjects had deficits in their ability to establish and/or inhibit mental focus when faced with conflict situations in reading.