Enhanced Creep Resistant Silicon-Nitride-Based Nanocomposite
Silicon nitride–silicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO2 carbo‐thermal reduction during the sintering process. The developed material is nearly defect free and consists of a silicon nitride matrix with an average grain size of approximately 200 nm wit...
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| Published in | Journal of the American Ceramic Society Vol. 88; no. 6; pp. 1500 - 1503 |
|---|---|
| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Oxford, UK
Blackwell Science Inc
01.06.2005
Wiley Subscription Services, Inc |
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| Abstract | Silicon nitride–silicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO2 carbo‐thermal reduction during the sintering process. The developed material is nearly defect free and consists of a silicon nitride matrix with an average grain size of approximately 200 nm with inter‐ and intra‐granular SiC particles with sizes of approximately 150 and 40 nm, respectively. The creep behavior was investigated in bending at temperatures from 1200° to 1450°C, under stresses ranking from 50 to 150 MPa in air. The stress exponents are in the interval from 0.8 to 1.28 and the apparent activation energy is 480 kJ/mol. A significantly enhanced creep resistance was achieved by the incorporation of SiC nanoparticles into the matrix. This is because of a change of the microstructure and grain boundary chemistry leading to a change of creep mechanism and creep rate. |
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| AbstractList | Silicon nitride-silicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO2 carbo-thermal reduction during the sintering process. The developed material is nearly defect free and consists of a silicon nitride matrix with an average grain size of approximately 200 nm with inter- and intra-granular SiC particles with sizes of approximately 150 and 40 nm, respectively. The creep behavior was investigated in bending at temperatures from 1200 degrees to 1450 degrees C, under stresses ranking from 50 to 150 MPa in air. The stress exponents are in the interval from 0.8 to 1.28 and the apparent activation energy is 480 kJ/mol. A significantly enhanced creep resistance was achieved by the incorporation of SiC nanoparticles into the matrix. This is because of a change of the microstructure and grain boundary chemistry leading to a change of creep mechanism and creep rate. [PUBLICATION ABSTRACT] Silicon nitride-silicon carbide nanocomposite was prepared by an in-situ method that uses C+SiO2 carbothermal reduction during sintering. The material was nearly defect free and consisted of a silicon nitride matrix with an average grain size of approximately 200 nm with inter- and intra-granular SiC particles with sizes of approximately 150 and 40 nm, respectively. The creep behaviour was investigated in bending at temperatures from 1200 to 1450 C, under stresses ranging from 50 to 150 MPa in air. The stress exponents are in the interval from 0.8 to 1.28 and the apparent activation energy is 480 kJ/mol. A significantly enhanced creep resistance was achieved by the incorporation of SiC nanoparticles into the matrix, due to a change of the microstructure and grain boundary chemistry leading to a change of creep mechanism and creep rate. Silicon nitride–silicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO2 carbo‐thermal reduction during the sintering process. The developed material is nearly defect free and consists of a silicon nitride matrix with an average grain size of approximately 200 nm with inter‐ and intra‐granular SiC particles with sizes of approximately 150 and 40 nm, respectively. The creep behavior was investigated in bending at temperatures from 1200° to 1450°C, under stresses ranking from 50 to 150 MPa in air. The stress exponents are in the interval from 0.8 to 1.28 and the apparent activation energy is 480 kJ/mol. A significantly enhanced creep resistance was achieved by the incorporation of SiC nanoparticles into the matrix. This is because of a change of the microstructure and grain boundary chemistry leading to a change of creep mechanism and creep rate. Silicon nitride–silicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO 2 carbo‐thermal reduction during the sintering process. The developed material is nearly defect free and consists of a silicon nitride matrix with an average grain size of approximately 200 nm with inter‐ and intra‐granular SiC particles with sizes of approximately 150 and 40 nm, respectively. The creep behavior was investigated in bending at temperatures from 1200° to 1450°C, under stresses ranking from 50 to 150 MPa in air. The stress exponents are in the interval from 0.8 to 1.28 and the apparent activation energy is 480 kJ/mol. A significantly enhanced creep resistance was achieved by the incorporation of SiC nanoparticles into the matrix. This is because of a change of the microstructure and grain boundary chemistry leading to a change of creep mechanism and creep rate. Silicon nitridesilicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO2 carbo-thermal reduction during the sintering process. The developed material is nearly defect free and consists of a silicon nitride matrix with an average grain size of approximately 200 nm with inter- and intra-granular SiC particles with sizes of approximately 150 and 40 nm, respectively. The creep behavior was investigated in bending at temperatures from 1200DG to 1450DGC, under stresses ranking from 50 to 150 MPa in air. The stress exponents are in the interval from 0.8 to 1.28 and the apparent activation energy is 480 kJ/mol. A significantly enhanced creep resistance was achieved by the incorporation of SiC nanoparticles into the matrix. This is because of a change of the microstructure and grain boundary chemistry leading to a change of creep mechanism and creep rate. |
| Author | Hvizdoš, P. Hnatko, M. Reece, M. J. Kovalčík, J. Šajgalík, P. Dusza, J. |
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| Cites_doi | 10.2109/jcersj.99.974 10.1016/S0955-2219(02)00112-7 10.1002/9780470294628.ch85 10.1111/j.1151-2916.1996.tb07914.x 10.1111/j.1151-2916.1973.tb12520.x 10.1111/j.1151-2916.1971.tb12263.x 10.1111/j.1151-2916.1994.tb04576.x 10.1016/S0955-2219(97)00180-5 10.1016/S0022-3093(00)00081-8 10.1023/A:1017982719694 10.1111/j.1151-2916.1990.tb09803.x |
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| Notes | ark:/67375/WNG-DBJ8W52K-M ArticleID:JACE00289 istex:ADD9289B228C251653B7078C15CCB9A39C9935BF This work was realized with the financial support of the Slovak Grant Agency, under the contract No. 2/4173/04, APVT‐51‐049702, of the Royal Society, and of NANOSMART, Centre of Excellence, SAS. D. J. Green—contributing editor ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
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| References_xml | – volume: 73 start-page: 1606 year: 1990 end-page: 12 article-title: Grain‐Boundary‐Phase Crystallization and Strength of Silicon Nitride Sintered with YSiAlON Glass publication-title: J. Am. Ceram. Soc. – volume: 79 start-page: 585 year: 1996 end-page: 90 article-title: Silicon Nitride Based Nanocomposite publication-title: J. Am. Ceram. Soc. – volume: 54 start-page: 196 year: 1971 end-page: 9 article-title: Calculation of Stresses and Strains in Four‐Point Bending Creep Tests publication-title: J. Am. Ceram. Soc. – volume: 81 start-page: 1109 year: 1998 end-page: 20 article-title: Si N /SiC Nanocomposite Materials publication-title: II, Hot Strength, Creep, and Oxidation Resistance – start-page: 233 year: 1993 end-page: 44 – volume: 99 start-page: 974 year: 1991 end-page: 82 article-title: New Design Concept of Structural Ceramics‐Ceramic Nanocomposites publication-title: J. Ceram. Soc. Jpn. – volume: 36 start-page: 4469 year: 2001 end-page: 77 article-title: Low‐Cycle Fatigue Strength Under Step Loading of a Si N +SiC Nanocomposite at 1350°C publication-title: J. Mater. Sci. – volume: 56 start-page: 445 year: 1973 end-page: 50 article-title: Effect of Microstructure on Strength of Si N –SiC Composite System publication-title: J. Am. Ceram. Soc. – volume: 21 start-page: 713 year: 2000 end-page: 20 article-title: High–Temperature Properties of Si N /SiC Nanocomposites publication-title: Ceram. Eng. Sci. Proc. – volume: 92 start-page: 937 issue: [8] year: 2001 end-page: 41 article-title: SiC–Si N Nanocomposite Prepared by the Addition of SiO +C publication-title: Zeitschrift für Metallkunde – volume: 77 start-page: 3237 year: 1994 end-page: 43 article-title: R‐Curve Behavior and Stable Crack Growth at Elevated Temperatures (1500°–1650°C) in a Si N /SiC Nanocomposite publication-title: J. Am. Ceram. Soc. – volume: 81 start-page: 1095 year: 1998 end-page: 108 article-title: Si N /SiC Nanocomposites Materials publication-title: I. Fabrication and Mechanical Properties at Room Temperature – volume: 271 start-page: 79 year: 2000 end-page: 87 article-title: Chemistry and Inherent Viscosity of Glasses Segregated at Grain Boundaries of Silicon Nitride and Silicon Carbide Ceramics publication-title: J. Non-Cryst. Solids. – volume: 22 start-page: 2517 year: 2002 end-page: 25 article-title: Effect of Heat Treatment on Microstructure and Creep Behaviour of Silicon Nitride Based Ceramics publication-title: J. Eur. Ceram. Soc. – volume: 18 start-page: 907 year: 1988 end-page: 14 article-title: Microstructure and High‐Temperature Strength of Si N –SiC Nanocomposite publication-title: J. Eur. Ceram. Soc. – ident: e_1_2_6_5_2 doi: 10.2109/jcersj.99.974 – ident: e_1_2_6_16_2 – ident: e_1_2_6_13_2 doi: 10.1016/S0955-2219(02)00112-7 – ident: e_1_2_6_7_2 doi: 10.1002/9780470294628.ch85 – ident: e_1_2_6_11_2 doi: 10.1111/j.1151-2916.1996.tb07914.x – volume: 92 start-page: 937 issue: 8 year: 2001 ident: e_1_2_6_14_2 article-title: SiC–Si3N4 Nanocomposite Prepared by the Addition of SiO2+C publication-title: Zeitschrift für Metallkunde contributor: fullname: Šajgalík P. – ident: e_1_2_6_4_2 doi: 10.1111/j.1151-2916.1973.tb12520.x – ident: e_1_2_6_15_2 doi: 10.1111/j.1151-2916.1971.tb12263.x – volume: 81 start-page: 1109 year: 1998 ident: e_1_2_6_6_2 article-title: Si3N4/SiC Nanocomposite Materials publication-title: II, Hot Strength, Creep, and Oxidation Resistance contributor: fullname: Rendtel A. – ident: e_1_2_6_8_2 doi: 10.1111/j.1151-2916.1994.tb04576.x – volume: 81 start-page: 1095 year: 1998 ident: e_1_2_6_9_2 article-title: Si3N4/SiC Nanocomposites Materials publication-title: I. Fabrication and Mechanical Properties at Room Temperature contributor: fullname: Herrmann M. – ident: e_1_2_6_10_2 doi: 10.1016/S0955-2219(97)00180-5 – ident: e_1_2_6_17_2 doi: 10.1016/S0022-3093(00)00081-8 – start-page: 233 volume-title: Tailoring of Mechanical Properties of Si3N4 Ceramics year: 1993 ident: e_1_2_6_2_2 contributor: fullname: Hoffmann M. J. – ident: e_1_2_6_12_2 doi: 10.1023/A:1017982719694 – ident: e_1_2_6_3_2 doi: 10.1111/j.1151-2916.1990.tb09803.x |
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| Snippet | Silicon nitride–silicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO2 carbo‐thermal reduction during the sintering process.... Silicon nitride–silicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO 2 carbo‐thermal reduction during the sintering... Silicon nitride-silicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO2 carbo-thermal reduction during the sintering process.... Silicon nitride-silicon carbide nanocomposite was prepared by an in-situ method that uses C+SiO2 carbothermal reduction during sintering. The material was... Silicon nitridesilicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO2 carbo-thermal reduction during the sintering process.... |
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| SubjectTerms | Ceramic sintering Creep tests Grain boundaries Microstructure Nanostructured ceramics Silicon carbide |
| Title | Enhanced Creep Resistant Silicon-Nitride-Based Nanocomposite |
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