Enhanced Creep Resistant Silicon-Nitride-Based Nanocomposite
Silicon nitride–silicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO2 carbo‐thermal reduction during the sintering process. The developed material is nearly defect free and consists of a silicon nitride matrix with an average grain size of approximately 200 nm wit...
Saved in:
Published in | Journal of the American Ceramic Society Vol. 88; no. 6; pp. 1500 - 1503 |
---|---|
Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Oxford, UK
Blackwell Science Inc
01.06.2005
Wiley Subscription Services, Inc |
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | Silicon nitride–silicon carbide nanocomposite has been prepared by an in situ method that utilizes C+SiO2 carbo‐thermal reduction during the sintering process. The developed material is nearly defect free and consists of a silicon nitride matrix with an average grain size of approximately 200 nm with inter‐ and intra‐granular SiC particles with sizes of approximately 150 and 40 nm, respectively. The creep behavior was investigated in bending at temperatures from 1200° to 1450°C, under stresses ranking from 50 to 150 MPa in air. The stress exponents are in the interval from 0.8 to 1.28 and the apparent activation energy is 480 kJ/mol. A significantly enhanced creep resistance was achieved by the incorporation of SiC nanoparticles into the matrix. This is because of a change of the microstructure and grain boundary chemistry leading to a change of creep mechanism and creep rate. |
---|---|
Bibliography: | ark:/67375/WNG-DBJ8W52K-M ArticleID:JACE00289 istex:ADD9289B228C251653B7078C15CCB9A39C9935BF This work was realized with the financial support of the Slovak Grant Agency, under the contract No. 2/4173/04, APVT‐51‐049702, of the Royal Society, and of NANOSMART, Centre of Excellence, SAS. D. J. Green—contributing editor ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0002-7820 1551-2916 |
DOI: | 10.1111/j.1551-2916.2005.00289.x |