Impact of Iterative Deuterium Annealing in Long-Channel MOSFET Performance

In contrast to conventional forming gas annealing (FGA), high-pressure deuterium annealing (HPD) shows a superior passivation of dangling bonds on the Si/SiO interface. However, research detailing the process optimization for HPD has been modest. In this context, this paper demonstrates the iterativ...

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Published inMaterials Vol. 15; no. 5; p. 1960
Main Authors Wang, Dong-Hyun, Ku, Ja-Yun, Jung, Dae-Han, Lee, Khwang-Sun, Shin, Woo Cheol, Yang, Byung-Do, Park, Jun-Young
Format Journal Article
LanguageEnglish
Published Switzerland MDPI AG 07.03.2022
MDPI
Subjects
Annealing
Conflicts of interest
Deuterium
Experiments
forming gas annealing
gate-enclosed MOSFET
high pressure deuterium annealing
MOSFETs
Optimization
post metal annealing
Semiconductor devices
Silicon dioxide
Silicon wafers
Test vehicles
annealing
forming gas annealing
post metal annealing
gate-enclosed MOSFET
high pressure deuterium annealing
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Summary:In contrast to conventional forming gas annealing (FGA), high-pressure deuterium annealing (HPD) shows a superior passivation of dangling bonds on the Si/SiO interface. However, research detailing the process optimization for HPD has been modest. In this context, this paper demonstrates the iterative impact of HPD for the better fabrication of semiconductor devices. Long-channel gate-enclosed FETs are fabricated as a test vehicle. After each cycle of the annealing, device parameters are extracted and compared depending on the number of the HPD. Based on the results, an HPD condition that maximizes on-state current (I ) but minimizes off-state current (I ) can be provided.
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These authors contributed equally to this work.
ISSN:1996-1944
1996-1944
DOI:10.3390/ma15051960