Fabrication of a Monolithic Implantable Neural Interface from Cubic Silicon Carbide

• Published in: Micromachines (Basel) Vol. 10; no. 7; p. 430
• Main Authors: Beygi, Mohammad, Bentley, John T, Frewin, Christopher L, Kuliasha, Cary A, Takshi, Arash, Bernardin, Evans K, La Via, Francesco, Saddow, Stephen E
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 29.06.2019; MDPI
• Subjects: 3C-SiC; Amorphous materials; amorphous SiC; Amorphous silicon; Arrays; Biocompatibility; doped SiC; Electric potential; Electrochemical analysis; electrochemical characterization; Electrochemical impedance spectroscopy; Electrodes; epitaxial growth; Interfaces; Laboratory animals; Leakage current; Manufacturability; Materials failure; MEA; microelectrode array; Microelectrodes; N-p-n junctions; n-type; Nervous system; neural implant; neural interface; neural probe; P-n junctions; p-type; Plasma enhanced chemical vapor deposition; Polymers; Printed circuits; Reliability aspects; Semiconductor materials; SiC; Silicon carbide; SOI (semiconductors); Storage capacity; Substrates; Thin films; Voltage; United States > US; Michigan; amorphous SiC; MEA; neural probe; SiC; neural implant; microelectrode array; electrochemical characterization; doped SiC; epitaxial growth; p-type; neural interface; n-type; 3C-SiC
• ISSN: 2072-666X; 2072-666X
• DOI: 10.3390/mi10070430

One of the main issues with micron-sized intracortical neural interfaces (INIs) is their long-term reliability, with one major factor stemming from the material failure caused by the heterogeneous integration of multiple materials used to realize the implant. Single crystalline cubic silicon carbide (3C-SiC) is a semiconductor material that has been long recognized for its mechanical robustness and chemical inertness. It has the benefit of demonstrated biocompatibility, which makes it a promising candidate for chronically-stable, implantable INIs. Here, we report on the fabrication and initial electrochemical characterization of a nearly monolithic, Michigan-style 3C-SiC microelectrode array (MEA) probe. The probe consists of a single 5 mm-long shank with 16 electrode sites. An ~8 µm-thick p-type 3C-SiC epilayer was grown on a silicon-on-insulator (SOI) wafer, which was followed by a ~2 µm-thick epilayer of heavily n-type (n ) 3C-SiC in order to form conductive traces and the electrode sites. Diodes formed between the p and n layers provided substrate isolation between the channels. A thin layer of amorphous silicon carbide ( -SiC) was deposited via plasma-enhanced chemical vapor deposition (PECVD) to insulate the surface of the probe from the external environment. Forming the probes on a SOI wafer supported the ease of probe removal from the handle wafer by simple immersion in HF, thus aiding in the manufacturability of the probes. Free-standing probes and planar single-ended test microelectrodes were fabricated from the same 3C-SiC epiwafers. Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) were performed on test microelectrodes with an area of 491 µm in phosphate buffered saline (PBS) solution. The measurements showed an impedance magnitude of 165 kΩ ± 14.7 kΩ (mean ± standard deviation) at 1 kHz, anodic charge storage capacity (CSC) of 15.4 ± 1.46 mC/cm , and a cathodic CSC of 15.2 ± 1.03 mC/cm . Current-voltage tests were conducted to characterize the p-n diode, n-p-n junction isolation, and leakage currents. The turn-on voltage was determined to be on the order of ~1.4 V and the leakage current was less than 8 μA . This all-SiC neural probe realizes nearly monolithic integration of device components to provide a likely neurocompatible INI that should mitigate long-term reliability issues associated with chronic implantation.