A method to determine the strain and nucleation sites of stacked nano-objects

We determine the compositional distribution with atomic column resolution in a horizontal nanowire from the analysis of aberration-corrected high resolution Z-contrast images. The strain field in a layer capping the analysed nanowire is determined by anisotropic elastic theory from the resulting com...

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Bibliographic Details
Published inJournal of nanoscience and nanotechnology Vol. 8; no. 7; p. 3422
Main Authors Molina, Sergio I, Varela, María, Ben, Teresa, Sales, David L, Pizarro, Joaquín, Galindo, Pedro L, Fuster, David, González, Yolanda, González, Luisa, Pennycook, Stephen J
Format Journal Article
LanguageEnglish
Published United States 01.07.2008
Subjects
Anisotropy
Crystallization
Finite Element Analysis
Indium - chemistry
Microscopy, Electron, Transmission - methods
Microscopy, Phase-Contrast
Nanoparticles - chemistry
Nanostructures - chemistry
Nanotechnology - instrumentation
Nanotechnology - methods
Nanowires - chemistry
Phosphines - chemistry
Temperature
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Summary:We determine the compositional distribution with atomic column resolution in a horizontal nanowire from the analysis of aberration-corrected high resolution Z-contrast images. The strain field in a layer capping the analysed nanowire is determined by anisotropic elastic theory from the resulting compositional map. The reported method allows preferential nucleation sites for epitaxial nanowires to be predicted with high spatial resolution, as required for accurate tuning of desired optical properties. The application of this method has been exemplified in this work for stacked InAs(P) horizontal nanowires grown on InP separated by 3 nm thick InP layers, but we propose it as a general method to be applied to other stacked nano-objects.
ISSN:1533-4880
DOI:10.1166/jnn.2008.123