Effect of Fe atomic layers at the ferromagnet–semiconductor interface on temperature-dependent spin transport in semiconductors
Using artificially controlled ferromagnet (FM)–semiconductor (SC) interfaces, we study the decay of the nonlocal spin signals with increasing temperature in SC-based lateral spin-valve devices. When more than five atomic layers of Fe are inserted at the FM/SC interfaces, the temperature-dependent sp...
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Published in | Journal of applied physics Vol. 129; no. 18 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Melville
American Institute of Physics
14.05.2021
|
Subjects | |
Online Access | Get full text |
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Summary: | Using artificially controlled ferromagnet (FM)–semiconductor (SC) interfaces, we study the decay of the nonlocal spin signals with increasing temperature in SC-based lateral spin-valve devices. When more than five atomic layers of Fe are inserted at the FM/SC interfaces, the temperature-dependent spin injection/detection efficiency (
P
inj
/
det) can be interpreted in terms of the
T
3
2 law, meaning a model of the thermally excited spin waves in the FM electrodes. For the FM/SC interfaces with the insufficient insertion of Fe atomic layers, on the other hand, the decay of
P
inj
/
det is more rapid than the
T
3
2 curve. Using magneto-optical Kerr effect measurements, we find that more than five atomic layers of Fe inserted between FM and SC enable us to enhance the ferromagnetic nature of the FM/SC heterointerfaces. Thus, the ferromagnetism in the ultra-thin FM layer just on top of SC is strongly related to the temperature-dependent nonlocal spin transport in SC-based lateral spin-valve devices. We propose that the sufficient ferromagnetism near the FM/SC interface is essential for high-performance FM–SC hybrid devices above room temperature. |
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ISSN: | 0021-8979 1089-7550 |
DOI: | 10.1063/5.0048321 |