Carbon and Manganese in Semi-Insulating Bulk GaN Crystals

• Published in: Materials Vol. 15; no. 7; p. 2379
• Main Authors: Amilusik, Mikolaj, Zajac, Marcin, Sochacki, Tomasz, Lucznik, Boleslaw, Fijalkowski, Michal, Iwinska, Malgorzata, Wlodarczyk, Damian, Somakumar, Ajeesh Kumar, Suchocki, Andrzej, Bockowski, Michal
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 23.03.2022; MDPI
• Subjects: Carbon; co-doping; Crystal growth; Crystallization; Crystals; Electrical properties; Epitaxial growth; gallium nitride; Gallium nitrides; halide vapor phase epitaxy; Hall effect; Lasers; Low temperature; Manganese; Mechanical properties; Morphology; Nitrogen; Optical properties; Photoluminescence; Physical properties; Raman spectroscopy; Seeds; Temperature dependence; Vapor phase epitaxy; Vapor phases; co-doping; gallium nitride; manganese; carbon; halide vapor phase epitaxy
• ISSN: 1996-1944; 1996-1944
• DOI: 10.3390/ma15072379

Co-doping with manganese and carbon was performed in gallium nitride grown by halide vapor phase epitaxy method. Native seeds of high structural quality were used. The crystallized material was examined in terms of its structural, optical, and electrical properties. For that purpose, different characterization methods: x-ray diffraction, Raman spectroscopy, low-temperature photoluminescence, and temperature-dependent Hall effect measurements, were applied. The physical properties of the co-doped samples were compared with the properties of crystals grown in the same reactor, on similar seeds, but doped only with manganese or carbon. A comparison of the electrical and optical properties allowed to determine the role of manganese and carbon in doped and co-doped gallium nitride crystals.