Photoconductivity of Thin Films Obtained from a New Type of Polyindole

• Published in: Materials Vol. 15; no. 1; p. 228
• Main Authors: Salikhov, Renat B, Mustafin, Akhat G, Mullagaliev, Ilnur N, Salikhov, Timur R, Andriianova, Anastasiia N, Latypova, Lyaysan R, Sharafullin, Ildus F
• Format: Journal Article
• Language: English
• Published: Switzerland MDPI AG 29.12.2021; MDPI
• Subjects: Absorption; Aluminum; band gap; Current carriers; Current voltage characteristics; Electrodes; Emission analysis; Emission spectra; Fluorescence; Glass substrates; Indium tin oxides; mobility; Optoelectronics; Photoconductivity; Photoluminescence; phototransistor; Phototransistors; polyindole; polymer; Polymers; Quantum efficiency; Radiation; Thin films; Ultraviolet radiation; Japan; photoconductivity; polymer; mobility; phototransistor; polyindole; band gap
• ISSN: 1996-1944; 1996-1944
• DOI: 10.3390/ma15010228

The optoelectronic properties of a new poly(2-ethyl-3-methylindole) (MPIn) are discussed in this paper. The absorption and photoluminescence spectra were studied. The electronic spectrum of MPIn showed a single absorption maximum at 269 nm that is characteristic of the entire series of polyindoles. The fluorescence spectra show that the emission peaks of the test sample are centered around 520 nm. The photoconductivity of thin film samples of MPIn polyindole was studied by measuring the current-voltage characteristics under ultraviolet radiation with a wavelength of 350 nm. Samples of phototransistors were obtained, where thin films of MPIn polyindole were used as a transport layer, and their characteristics were measured and analyzed. The value of the quantum efficiency and the values of the mobility of charge carriers in thin polyindole films were estimated.