A Graphene-Based Vacuum Transistor with a High ON/OFF Current Ratio
A graphene‐based vacuum transistor (GVT) with a high ON/OFF current ratio is proposed and experimentally realized by employing electrically biased graphene as the electron emitter. The states of a GVT are switched by tuning the bias voltage applied to the graphene emitter with an ON/OFF current rati...
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Published in | Advanced functional materials Vol. 25; no. 37; pp. 5972 - 5978 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Blackwell Publishing Ltd
01.10.2015
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Subjects | |
Online Access | Get full text |
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Summary: | A graphene‐based vacuum transistor (GVT) with a high ON/OFF current ratio is proposed and experimentally realized by employing electrically biased graphene as the electron emitter. The states of a GVT are switched by tuning the bias voltage applied to the graphene emitter with an ON/OFF current ratio up to 106, a subthreshold slope of 120 mV dec−1 and low working voltages of <10 V, exhibiting switching performances superior to those of previously reported graphene‐based solid‐state transistors. GVTs are fabricated and integrated using silicon microfabrication technology. A perfectly symmetric ambipolar device is achieved by integrating two GVTs, implying the potential of realizing vacuum integrated circuits based on GVTs. GVTs are expected to find applications in extreme environments such as high temperature and intense irradiation.
Graphene‐based transistors with an ON/OFF current ratio up to 106 and a subthreshold slope of 120 mV dec−1 are developed by employing a vacuum channel. These transistors exhibit switching performances superior to those of graphene‐based transistors with solid‐state mediums for carrier transport. |
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Bibliography: | NSF of China - No. 61371001; No. 11304003; No. 61321001 Specialized Research Fund for the Doctoral Program of Higher Education of China - No. 20130001110030 Foundation for the Author of National Excellent Doctoral Dissertation of China - No. 201241 National Basic Research Program of China - No. 2013CB933604 ArticleID:ADFM201502034 ark:/67375/WNG-JH43H75H-8 istex:E36AEA4A958595CD635732FFA740BA0F95B69592 ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 1616-301X 1616-3028 |
DOI: | 10.1002/adfm.201502034 |