High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors

• Published in: IEEE electron device letters Vol. 34; no. 2; pp. 211 - 213
• Main Authors: Dey, A. W., Borg, B. M., Ganjipour, B., Ek, M., Dick, K. A., Lind, E., Thelander, C., Wernersson, L.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.02.2013; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Broken gap; Compound structure devices; Condensed Matter Physics; Cross-disciplinary physics: materials science; rheology; Den kondenserade materiens fysik; Doping; Electrical Engineering, Electronic Engineering, Information Engineering; Electronics; Elektroteknik och elektronik; Engineering and Technology; Exact sciences and technology; Fysik; GaSb; Heterojunctions; III-V; InAs; Logic gates; Materials science; Nanoscale devices; Nanoscale materials and structures: fabrication and characterization; Natural Sciences; Naturvetenskap; Physical Sciences; Physics; Quantum wires; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Teknik; Transistors; tunnel field-effect transistors (TFETs); tunnel field-effect transistors (TFETs); Tunneling; III―V; High strength current; Binary compound; Gallium antimonides; Tunnel effect; Transistor gate; GaSb; Tunnel transistors; III-V compound; Field effect transistor; Gate oxide; InAs; tunnel field-effect transistors (TFETs); Broken gap; Nanowires; Heterostructures; Transconductance; Electrical characteristic; Heterojunction; Interband transition
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2012.2234078

We present electrical characterization of GaSb/InAs(Sb) nanowire tunnel field-effect transistors. The broken band alignment of the GaSb/InAs(Sb) heterostructure is exploited to allow for interband tunneling without a barrier, leading to high on-current levels. We report a maximum drive current of 310 μA/μm at VDS = 0.5 V. Devices with scaled gate oxides display transconductances up to gm = 250 mS/mm at VDS = 300 mV, which are normalized to the nanowire circumference at the axial heterojunction.