High-density magnetoresistive random access memory operating at ultralow voltage at room temperature

• Published in: Nature communications Vol. 2; no. 1; p. 553
• Main Authors: Hu, Jia-Mian, Li, Zheng, Chen, Long-Qing, Nan, Ce-Wen
• Format: Journal Article
• Language: English
• Published: England Nature Publishing Group 22.11.2011; Nature Pub. Group
• ISSN: 2041-1723; 2041-1723
• DOI: 10.1038/ncomms1564

The main bottlenecks limiting the practical applications of current magnetoresistive random access memory (MRAM) technology are its low storage density and high writing energy consumption. Although a number of proposals have been reported for voltage-controlled memory device in recent years, none of them simultaneously satisfy the important device attributes: high storage capacity, low power consumption and room temperature operation. Here we present, using phase-field simulations, a simple and new pathway towards high-performance MRAMs that display significant improvements over existing MRAM technologies or proposed concepts. The proposed nanoscale MRAM device simultaneously exhibits ultrahigh storage capacity of up to 88 Gb inch(-2), ultralow power dissipation as low as 0.16 fJ per bit and room temperature high-speed operation below 10 ns.