Role of silicon in plant stress tolerance: opportunities to achieve a sustainable cropping system

Silicon (Si) being considered as a non-essential element for plant growth and development finds its role in providing several benefits to the plant, especially under stress conditions. Thus, Si can be regarded as “multi-talented” quasi-essential element. It is the most abundant element present in th...

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Published in3 Biotech Vol. 9; no. 3; p. 73
Main Authors Zargar, Sajad Majeed, Mahajan, Reetika, Bhat, Javaid A., Nazir, Muslima, Deshmukh, Rupesh
Format Journal Article
LanguageEnglish
Published Cham Springer International Publishing 01.03.2019
Springer Nature B.V
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Summary:Silicon (Si) being considered as a non-essential element for plant growth and development finds its role in providing several benefits to the plant, especially under stress conditions. Thus, Si can be regarded as “multi-talented” quasi-essential element. It is the most abundant element present in the earth’s crust after oxygen predominantly as a silicon dioxide (SiO 2 ), a form plants cannot utilize. Plants take up Si into their root from the soil in the plant-available forms (PAF) such as silicic acid or mono silicic acid [Si(OH) 4 or H 4 SiO 4 ]. Nevertheless, besides being abundantly available, the PAF of Si in the soil is mostly a limiting factor. To improve Si-uptake and derived benefits therein in plants, understanding the molecular basis of Si-uptake and transport within the tissues has great importance. Numerous Si-transporters (influx and efflux) have been identified in both monocot and dicot plants. A difference in the root anatomy of both monocot and dicot plants leads to a difference in the Si-uptake mechanism. In the present review, Si-transporters identified in different species, their evolution and the Si-uptake mechanism have been addressed. Further, the role of Si in biotic and abiotic stress tolerance has been discussed. The information provided here will help to plan the research in a better way to develop more sustainable cropping system by harnessing Si-derived benefits.
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ISSN:2190-572X
2190-5738
DOI:10.1007/s13205-019-1613-z