First On-Wafer Power Characterization of MMIC Amplifiers at Sub-Millimeter Wave Frequencies

• Published in: IEEE microwave and wireless components letters Vol. 18; no. 6; pp. 419 - 421
• Main Authors: Fung, A.K., Gaier, T., Samoska, L., Deal, W.R., Radisic, V., Mei, X.B., Yoshida, W., Liu, P.S., Uyeda, J., Barsky, M., Lai, R.
• Format: Journal Article
• Language: English
• Published: Jet Propulsion Laboratory IEEE 01.06.2008; Institute of Electrical and Electronics Engineers
• Subjects: Amplifier; Amplifiers; Applied sciences; Circuit properties; Design. Technologies. Operation analysis. Testing; Devices; Electric, optical and optoelectronic circuits; Electronics; Electronics And Electrical Engineering; Exact sciences and technology; Frequency; HEMTs; High electron mobility transistors; High power amplifiers; Indium phosphide; Integrated circuits; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits; Microwaves; MM-Wave; MMICs; monolithic microwave integrated circuit (MMIC); Packages; Performance evaluation; Power amplifiers; Power generation; Power measurement; Power measurements; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Submillimeter wave devices; Submillimeter wave technology; Submillimeter waves; Monolithic Microwave Integrated Circircuit; Amplifier; Power Measurement; Mm-Wave; Performance evaluation; Output power; Input signal; Submillimetric wave; Microwave; Submillimeter wave amplifiers; monolithic microwave integrated circuit (MMIC); MM-Wave; power measurement; Microwave integrated circuits; Millimetric wave; High electron mobility transistor; Electronic packaging; Microwave amplifier; Monolithic integrated circuit; MMIC; Multistage circuit; Wafer
• ISSN: 1531-1309; 1558-1764
• DOI: 10.1109/LMWC.2008.922713

We present on-wafer power measurements of 35 nm gate length InP HEMT amplifiers at 330 GHz. Various amplifiers are examined. The maximum output power of 1.78 mW is measured from a three stage amplifier. Additional output power may be possible but limited by our input power source level to saturate amplifiers. This result is the highest frequency on-wafer power measurement we are aware of reported to date, and demonstrates the technique we utilize to be a fast method of evaluating power performance of submillimeter wave amplifiers without the need to package devices.