Nano-artifact metrics based on random collapse of resist

Artifact metrics is an information security technology that uses the intrinsic characteristics of a physical object for authentication and clone resistance. Here, we demonstrate nano-artifact metrics based on silicon nanostructures formed via an array of resist pillars that randomly collapse when ex...

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Bibliographic Details
Published inScientific reports Vol. 4; no. 1; p. 6142
Main Authors Matsumoto, Tsutomu, Hoga, Morihisa, Ohyagi, Yasuyuki, Ishikawa, Mikio, Naruse, Makoto, Hanaki, Kenta, Suzuki, Ryosuke, Sekiguchi, Daiki, Tate, Naoya, Ohtsu, Motoichi
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 21.08.2014
Nature Publishing Group
Subjects
142/126
147/135
639/166/987
639/705/258
639/925/357/551
Cloning
Collapse
Engineering
Humanities and Social Sciences
Lithography
multidisciplinary
Scanning electron microscopy
Science
Silicon
Values
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Summary:Artifact metrics is an information security technology that uses the intrinsic characteristics of a physical object for authentication and clone resistance. Here, we demonstrate nano-artifact metrics based on silicon nanostructures formed via an array of resist pillars that randomly collapse when exposed to electron-beam lithography. The proposed technique uses conventional and scalable lithography processes and because of the random collapse of resist, the resultant structure has extremely fine-scale morphology with a minimum dimension below 10 nm, which is less than the resolution of current lithography capabilities. By evaluating false match, false non-match and clone-resistance rates, we clarify that the nanostructured patterns based on resist collapse satisfy the requirements for high-performance security applications.
ISSN:2045-2322
2045-2322
DOI:10.1038/srep06142