Polysilicon thin-film transistors using self-aligned cobalt and nickel silicide source and drain contacts

Polysilicon thin-film transistors (TFTs) with island thickness of 20 and 70 nm were fabricated with self-aligned cobalt and nickel silicide contacts to the source and drain. The silicide contacts are shown to reduce the series resistance, which limits the on-current of the device, thus significantly...

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Bibliographic Details
Published inIEEE electron device letters Vol. 20; no. 7; pp. 332 - 334
Main Authors Sarcona, G.T., Stewart, M., Hatalis, M.K.
Format Journal Article
LanguageEnglish
Published IEEE 01.07.1999
Subjects
Annealing
Cobalt
Devices
Drains
Driver circuits
Flat panel displays
Islands
Leakage current
Nickel
Nickel silicide
Semiconductor devices
Silicides
Substrates
Thin film transistors
Thin films
Threshold voltage
Transistors
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Summary:Polysilicon thin-film transistors (TFTs) with island thickness of 20 and 70 nm were fabricated with self-aligned cobalt and nickel silicide contacts to the source and drain. The silicide contacts are shown to reduce the series resistance, which limits the on-current of the device, thus significantly increasing the effective mobility in the 20-nm island devices. The mobilities of 20-nm cobalt and nickel silicided devices are similar to those with 70-nm islands, 31 versus 33 cm/sup 2//V-s, whereas the nonsilicided 20-nm devices have a mobility of only 13 cm/sup 2//V-s. The island thickness is shown to influence other device parameters affecting active matrix display driver circuit design, such as threshold voltage, leakage current, and subthreshold swing; all these parameters are improved when the island thickness is decreased.
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ISSN:0741-3106
1558-0563
DOI:10.1109/55.772367