Effect of the boron content on the steam activation of boron-doped diamond electrodes

• Published in: Carbon (New York) Vol. 65; pp. 206 - 213
• Main Authors: Zhang, Junfeng, Nakai, Takaaki, Uno, Masaharu, Nishiki, Yoshinori, Sugimoto, Wataru
• Format: Journal Article
• Language: English
• Published: Kidlington Elsevier Ltd 01.12.2013; Elsevier
• Subjects: Activation; Boron; Carbon; Cross-disciplinary physics: materials science; rheology; Diamonds; Electrodes; Etching; Exact sciences and technology; Fullerenes and related materials; diamonds, graphite; Materials science; Physics; Planes; Specific materials; Water vapor; Electrodes; Boron additions; Boron; Activation; Diamonds; Steam
• ISSN: 0008-6223; 1873-3891
• DOI: 10.1016/j.carbon.2013.08.015

In order to investigate the initial stages of the steam-activation process of boron-doped diamond (BDD) electrodes, polycrystalline BDD electrodes with different levels of boron doping (800, 2500 and 5000ppm) and crystal orientation were treated with water vapor at 800°C. A higher degree of etching was observed for BDD electrodes with higher boron content. Based on scanning electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy, it is suggested that the {111} planes are preferentially etched. Thus, high-boron containing BDD electrodes which have a higher abundance of the {111} planes are heavily etched, while low-boron containing BDD electrodes with a mixed surface of {100} and {111} planes are less corroded. The steam activation of BDD electrodes have a higher electrochemically active surface area and wider potential window compared to pristine BDD electrodes.