Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate

By conducting a 1200°C vacuum annealing of a 3C-SiC(111) ultrathin film preformed on a Si(110) surface, we have succeeded in forming a graphene layer on a Si substrate. Raman-scattering spectrum from this surface presents a distinct 2D band, whose deconvolution into four subcomponents indicates that...

Full description

Saved in:
Bibliographic Details
Published inE-journal of surface science and nanotechnology Vol. 7; pp. 107 - 109
Main Authors Miyamoto, Yu, Handa, Hiroyuki, Saito, Eiji, Konno, Atsushi, Narita, Yuzuru, Suemitsu, Maki, Fukidome, Hirokazu, Ito, Takashi, Yasui, Kanji, Nakazawa, Hideki, Endoh, Tetsuo
Format Journal Article
LanguageEnglish
Published Tokyo The Japan Society of Vacuum and Surface Science 01.01.2009
Japan Science and Technology Agency
Subjects
Gas-source MBE
Graphene
Heteroepitaxy
Organosilane
Silicon carbide
Online AccessGet full text

Cover

More Information
Summary:By conducting a 1200°C vacuum annealing of a 3C-SiC(111) ultrathin film preformed on a Si(110) surface, we have succeeded in forming a graphene layer on a Si substrate. Raman-scattering spectrum from this surface presents a distinct 2D band, whose deconvolution into four subcomponents indicates that the film mostly consists of a two-layer graphene. The peak position is blue-shifted from that of a free-standing graphene formed by a mechanical exfoliation method, suggesting a compressive stress in the film. [DOI: 10.1380/ejssnt.2009.107]
ISSN:1348-0391
1348-0391
DOI:10.1380/ejssnt.2009.107