Nano-Structure-Controlled Very Low Resistivity Cu Wires Formed by High Purity and Optimized Additives

Resistivity increase in nano-level Cu wires is becoming a critical issue for high speed ULSIs. We have established a new manufacturing process utilizing very high purity 9N electrolyte and optimized additives to control nano-structures of Cu wires, and we realized Cu wires for practical use with 50%...

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Bibliographic Details
Published inIEEE journal of the Electron Devices Society Vol. 6; pp. 506 - 511
Main Authors Onuki, Jin, Tamahashi, Kunihiro, Inami, Takashi, Nagano, Takatoshi, Sasajima, Yasushi, Ikeda, Shuji
Format Journal Article
LanguageEnglish
Published New York IEEE 01.01.2018
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Additives
Annealing
Conductivity
Electrical resistivity
Electrolytes
Grain boundaries
Grain size
High purity electrolyte
low resistivity
nano-structure controlled Cu wire
optimized additives
Purity
Wires
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Summary:Resistivity increase in nano-level Cu wires is becoming a critical issue for high speed ULSIs. We have established a new manufacturing process utilizing very high purity 9N electrolyte and optimized additives to control nano-structures of Cu wires, and we realized Cu wires for practical use with 50% lower resistivity than those made with the conventional process. Using STEM analyses and phase field simulation, we also ascertained the reason for getting the very low resistivity Cu wires.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2018.2808494