Nano-Structure-Controlled Very Low Resistivity Cu Wires Formed by High Purity and Optimized Additives
Resistivity increase in nano-level Cu wires is becoming a critical issue for high speed ULSIs. We have established a new manufacturing process utilizing very high purity 9N electrolyte and optimized additives to control nano-structures of Cu wires, and we realized Cu wires for practical use with 50%...
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Published in | IEEE journal of the Electron Devices Society Vol. 6; pp. 506 - 511 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.01.2018
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subjects | |
Online Access | Get full text |
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Summary: | Resistivity increase in nano-level Cu wires is becoming a critical issue for high speed ULSIs. We have established a new manufacturing process utilizing very high purity 9N electrolyte and optimized additives to control nano-structures of Cu wires, and we realized Cu wires for practical use with 50% lower resistivity than those made with the conventional process. Using STEM analyses and phase field simulation, we also ascertained the reason for getting the very low resistivity Cu wires. |
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ISSN: | 2168-6734 2168-6734 |
DOI: | 10.1109/JEDS.2018.2808494 |