Optimized carrier extraction at interfaces for 23.6% efficient tin-lead perovskite solar cells
Carrier extraction in mixed tin-lead perovskite solar cells is improved by modifying the top and bottom perovskite surfaces with ethylenediammonium diiodide and glycine hydrochloride, respectively. Trap densities in perovskite layers are reduced as a result of surface passivation effects and an incr...
Saved in:
Published in | Energy & environmental science Vol. 15; no. 5; pp. 296 - 217 |
---|---|
Main Authors | , , , , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Cambridge
Royal Society of Chemistry
18.05.2022
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | Carrier extraction in mixed tin-lead perovskite solar cells is improved by modifying the top and bottom perovskite surfaces with ethylenediammonium diiodide and glycine hydrochloride, respectively. Trap densities in perovskite layers are reduced as a result of surface passivation effects and an increase in film crystallinity. In addition, the oriented aggregation of the ethylenediammonium and glycinium cations at the charge collection interfaces results in the formation of surface dipoles, which facilitate charge extraction. As a result, the treated mixed tin-lead perovskite solar cells showed improved performance, with a fill factor of 0.82 and a power conversion efficiency of up to 23.6%. The unencapsulated device also shows improved stability under AM1.5 G, retaining over 80% of the initial efficiency after 200 h continuous operation in an inert atmosphere. Our strategy is also successfully applied to centimeter-scale devices, with efficiencies of up to 21.0%.
This work provides an efficient way to facilitate both electron and hole extraction in the designated interfaces of perovskite solar cells. A record power conversion efficiency of 23.6% for mixed Sn-Pb perovskite solar cell devices is realized. |
---|---|
Bibliography: | https://doi.org/10.1039/d2ee00288d Electronic supplementary information (ESI) available. See DOI |
ISSN: | 1754-5692 1754-5706 |
DOI: | 10.1039/d2ee00288d |