Electrical Stability of Solution-Processed a-IGZO TFTs Exposed to High-Humidity Ambient for Long Periods

The variations in the electrical and mechanical properties of solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors exposed to high-humidity ambient conditions for long periods were analyzed. When the TFT was exposed to high-humidity conditions, field-effect mobility severely...

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Bibliographic Details
Published inIEEE journal of the Electron Devices Society Vol. 7; pp. 26 - 32
Main Authors Lee, Seung-Un, Jeong, Jaewook
Format Journal Article
LanguageEnglish
Published New York IEEE 2019
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
a-IGZO
ambient
Electrodes
Exposure
Gallium
Humidity
Indium gallium zinc oxide
Mechanical factors
Mechanical properties
Semiconductor devices
stability
Stability analysis
Substrates
Technology assessment
thin film transistor
Thin film transistors
Water
Water chemistry
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Summary:The variations in the electrical and mechanical properties of solution-processed amorphous indium-gallium-zinc-oxide thin-film transistors exposed to high-humidity ambient conditions for long periods were analyzed. When the TFT was exposed to high-humidity conditions, field-effect mobility severely decreased, while ON/OFF current ratio improved and subthreshold slope value remained nearly constant, which is different from that exposed to low-humidity condition. We found that the H2O molecules induce mechanical peeling of the active layer such that they act as acceptor-like deep states, which is very different from the prior results under low humidity condition. The variations in electrical characteristics were systematically analyzed using a technology-CAD simulation before and after exposure to highhumidity conditions.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2018.2875755