Epitaxial lift-off of freestanding (011) and (111) SrRuO3 thin films using a water sacrificial layer

Two-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO 3 thin films u...

Full description

Saved in:
Bibliographic Details
Published inScientific reports Vol. 11; no. 1; pp. 12435 - 8
Main Authors Le, Phu T. P., ten Elshof, Johan E., Koster, Gertjan
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 14.06.2021
Nature Publishing Group
Nature Portfolio
Subjects
639/301
639/766
639/925
Humanities and Social Sciences
multidisciplinary
Science
Science (multidisciplinary)
Thin films
Online AccessGet full text

Cover

More Information
Summary:Two-dimensional freestanding thin films of single crystalline oxide perovskites are expected to have great potential in integration of new features to the current Si-based technology. Here, we showed the ability to create freestanding single crystalline (011)- and (111)-oriented SrRuO 3 thin films using Sr 3 Al 2 O 6 water-sacrificial layer. The epitaxial Sr 3 Al 2 O 6 (011) and Sr 3 Al 2 O 6 (111) layers were realized on SrTiO 3 (011) and SrTiO 3 (111), respectively. Subsequently, SrRuO 3 films were epitaxially grown on these sacrificial layers. The freestanding single crystalline SrRuO 3 (011) pc and SrRuO 3 (111) pc films were successfully transferred on Si substrates, demonstrating possibilities to transfer desirable oriented oxide perovskite films on Si and arbitrary substrates.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 14
content type line 23
ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-021-91848-2