High Mobility and Luminescent Efficiency in Organic Single-Crystal Light-Emitting Transistors

• Published in: Advanced functional materials Vol. 19; no. 11; pp. 1728 - 1735
• Main Authors: Bisri, Satria Zulkarnaen, Takenobu, Taishi, Yomogida, Yohei, Shimotani, Hidekazu, Yamao, Takeshi, Hotta, Shu, Iwasa, Yoshihiro
• Format: Journal Article
• Language: English
• Published: Weinheim WILEY-VCH Verlag 09.06.2009; WILEY‐VCH Verlag
• Subjects: ambipolar charge transport; oligomers; optical confinement; organic semiconductors; photonics
• ISSN: 1616-301X; 1616-3028
• DOI: 10.1002/adfm.200900028

A high‐performance ambipolar light‐emitting transistor (LET) that has high hole and electron mobilities and excellent luminescence characteristics is described. By using this device, a conspicuous light‐confined edge emission and current‐density‐dependent spectral evolution are observed. These findings will result in broader utilization of device potential and they provide a promising route for realizing electrically driven organic lasers. High‐performance ambipolar light‐emitting transistors (LETs) of highly photoluminescent α,ω‐bis(biphenylyl)terthiophene single crystals exhibit high hole and electron mobilities. The electroluminescence is confined inside the single‐crystal channel and emits solely from its edges. A current‐density‐dependent spectral evolution is observed. This suggests that ambipolar LETs from organic single crystals are a promising route for electrically driven organic laser realization.