Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum

In this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological phase–vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg 1− x Cd x Te films, in wh...

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Published inScientific reports Vol. 11; no. 1; p. 11638
Main Authors Kazakov, A. S., Galeeva, A. V., Artamkin, A. I., Ikonnikov, A. V., Ryabova, L. I., Dvoretsky, S. A., Mikhailov, N. N., Bannikov, M. I., Danilov, S. N., Khokhlov, D. R.
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LanguageEnglish
Published London Nature Publishing Group UK 02.06.2021
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Abstract In this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological phase–vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg 1− x Cd x Te films, in which the PT -symmetric terahertz photoconductivity is observed. It is shown that the effect originates from features of the interface topological film–trivial buffer/cap layer. The PT -symmetric terahertz photoconductivity is not provided by electron states formed at the interface topological film–vacuum.
AbstractList In this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological phase–vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg 1− x Cd x Te films, in which the PT -symmetric terahertz photoconductivity is observed. It is shown that the effect originates from features of the interface topological film–trivial buffer/cap layer. The PT -symmetric terahertz photoconductivity is not provided by electron states formed at the interface topological film–vacuum.
In this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological phase–vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg1−xCdxTe films, in which the PT-symmetric terahertz photoconductivity is observed. It is shown that the effect originates from features of the interface topological film–trivial buffer/cap layer. The PT-symmetric terahertz photoconductivity is not provided by electron states formed at the interface topological film–vacuum.
Abstract In this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological phase–vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg1−x Cd x Te films, in which the PT-symmetric terahertz photoconductivity is observed. It is shown that the effect originates from features of the interface topological film–trivial buffer/cap layer. The PT-symmetric terahertz photoconductivity is not provided by electron states formed at the interface topological film–vacuum.
Abstract In this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological phase–vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg 1− x Cd x Te films, in which the PT -symmetric terahertz photoconductivity is observed. It is shown that the effect originates from features of the interface topological film–trivial buffer/cap layer. The PT -symmetric terahertz photoconductivity is not provided by electron states formed at the interface topological film–vacuum.
ArticleNumber 11638
Author Mikhailov, N. N.
Khokhlov, D. R.
Ikonnikov, A. V.
Ryabova, L. I.
Dvoretsky, S. A.
Artamkin, A. I.
Galeeva, A. V.
Kazakov, A. S.
Bannikov, M. I.
Danilov, S. N.
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SSID ssj0000529419
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Snippet In this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological phase–vacuum may...
Abstract In this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological...
Abstract In this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological...
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SubjectTerms 639/301/119/2792/4128
639/766/119/1000/1018
639/766/119/2792/4128
639/766/400/561
Cadmium telluride
Geometry
Humanities and Social Sciences
Interfaces
Lasers
Magnetic fields
multidisciplinary
Physics
Radiation
Science
Science (multidisciplinary)
Symmetry
Vacuum
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  providerName: Springer Nature
Title Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum
URI https://link.springer.com/article/10.1038/s41598-021-91141-2
https://www.proquest.com/docview/2536110977
https://search.proquest.com/docview/2536798071
https://pubmed.ncbi.nlm.nih.gov/PMC8172881
https://doaj.org/article/82a6e98253ee48408b0179fd04729b2a
Volume 11
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