Distinction between electron states formed at topological insulator interfaces with the trivial phase and vacuum

In this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological phase–vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg 1− x Cd x Te films, in wh...

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Published inScientific reports Vol. 11; no. 1; p. 11638
Main Authors Kazakov, A. S., Galeeva, A. V., Artamkin, A. I., Ikonnikov, A. V., Ryabova, L. I., Dvoretsky, S. A., Mikhailov, N. N., Bannikov, M. I., Danilov, S. N., Khokhlov, D. R.
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 02.06.2021
Nature Publishing Group
Nature Portfolio
Subjects
639/301/119/2792/4128
639/766/119/1000/1018
639/766/119/2792/4128
639/766/400/561
Cadmium telluride
Geometry
Humanities and Social Sciences
Interfaces
Lasers
Magnetic fields
multidisciplinary
Physics
Radiation
Science
Science (multidisciplinary)
Symmetry
Vacuum
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Summary:In this paper, we show that electron states formed in topological insulators at the interfaces topological phase–trivial phase and topological phase–vacuum may possess different properties. This is demonstrated on an example of heterostructures based on thick topological Hg 1− x Cd x Te films, in which the PT -symmetric terahertz photoconductivity is observed. It is shown that the effect originates from features of the interface topological film–trivial buffer/cap layer. The PT -symmetric terahertz photoconductivity is not provided by electron states formed at the interface topological film–vacuum.
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ISSN:2045-2322
2045-2322
DOI:10.1038/s41598-021-91141-2