Variability Impact of Random Dopant Fluctuation on Nanoscale Junctionless FinFETs

• Published in: IEEE electron device letters Vol. 33; no. 6; pp. 767 - 769
• Main Authors: Leung, G., Chi On Chui
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.06.2012; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Channels; Computer aided design; Dopants; Doping; Electronics; Exact sciences and technology; Fin field-effect transistor (FinFET); FinFETs; Fluctuation; junctionless; Leakage current; Nanocomposites; Nanomaterials; Nanoscale devices; Nanostructure; random dopant fluctuation (RDF); Resource description framework; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Semiconductor process modeling; Threshold voltage; Transistors; variability; Voltage threshold; MOSFET; Circuit design; Fin field-effect transistor (FinFET); Doping; Roughness; Threshold current; Dual gate transistor; variability; random dopant fluctuation (RDF); Self aligned technology; Field effect transistor; Nanometer scale; junctionless; Leakage current; Computer aided design; DIBL effect
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2012.2191931

Junctionless fin held-effect transistor (FinFET) variability due to random dopant fluctuation (RDF) was investigated for sub-32-nm technology generations using technology computer-aided design (TCAD) simulations. Results indicate that variations in threshold voltage, drive current, leakage current, and drain-induced barrier lowering are heavily impacted by RDF for junctionless FinFETs with sufficiently high channel doping (greater than 10 19 cm -3 ). Unexpectedly, the RDF impact is found to be less severe for finer technology generations, although the overall magnitude is still significant compared to line-edge-roughness-induced variability.