Effect of passivation process in upgraded metallurgical grade (UMG)-silicon solar cells
We have investigated the effect of high-pressure pure hydrogen annealing (HPHA) for upgraded metallurgical grade (UMG)-silicon solar cell in order to obtain cost-effective high-efficiency cell using post-metallization anneal at a relatively low temperature. We have observed that high-pressure pure h...
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Published in | Solar energy materials and solar cells Vol. 95; no. 1; pp. 63 - 65 |
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Main Author | |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Amsterdam
Elsevier B.V
2011
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | We have investigated the effect of high-pressure pure hydrogen annealing (HPHA) for upgraded metallurgical grade (UMG)-silicon solar cell in order to obtain cost-effective high-efficiency cell using post-metallization anneal at a relatively low temperature. We have observed that high-pressure pure hydrogen annealing effectively passivated the defects and improved the minority carrier lifetime, series resistance and conversion efficiency. It can be attributed to significantly improved hydrogenation in high-pressure pure hydrogen process. This improvement can be explained by the enhanced hydrogenation of silicon solar cell with antireflection layer due to hydrogen re-incorporation. The results of this experiment represent a promising guideline for improving the high-efficiency solar cells by introducing an easy and low cost process of post-hydrogenation in optimized condition. |
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Bibliography: | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 23 |
ISSN: | 0927-0248 1879-3398 |
DOI: | 10.1016/j.solmat.2010.05.018 |