Quantum Hall effect of Weyl fermions in n-type semiconducting tellurene

Dirac and Weyl nodal materials can host low-energy relativistic quasiparticles. Under strong magnetic fields, the topological properties of Dirac/Weyl materials can directly be observed through quantum Hall states. However, most Dirac/Weyl nodes generically exist in semimetals without exploitable ba...

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Published inNature nanotechnology Vol. 15; no. 7; pp. 585 - 591
Main Authors Qiu, Gang, Niu, Chang, Wang, Yixiu, Si, Mengwei, Zhang, Zhuocheng, Wu, Wenzhuo, Ye, Peide D.
Format Journal Article
LanguageEnglish
Published London Nature Publishing Group UK 01.07.2020
Nature Publishing Group
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Summary:Dirac and Weyl nodal materials can host low-energy relativistic quasiparticles. Under strong magnetic fields, the topological properties of Dirac/Weyl materials can directly be observed through quantum Hall states. However, most Dirac/Weyl nodes generically exist in semimetals without exploitable band gaps due to their accidental band-crossing origin. Here, we report the first experimental observation of Weyl fermions in a semiconductor. Tellurene, the two-dimensional form of tellurium, possesses a chiral crystal structure which induces unconventional Weyl nodes with a hedgehog-like radial spin texture near the conduction band edge. We synthesize high-quality n-type tellurene by a hydrothermal method with subsequent dielectric doping and detect a topologically non-trivial π Berry phase in quantum Hall sequences. Our work expands the spectrum of Weyl matter into semiconductors and offers a new platform to design novel quantum devices by marrying the advantages of topological materials to versatile semiconductors. The accidental band-crossing origin of Weyl nodes paired with the absence of sizeable band gaps hampers the exploitation of low-energy relativistic quasiparticles in Weyl semimetals. In a gate-tunable high-quality tellurene film, quantum Hall measurements unveil a topologically non-trivial π Berry phase caused by unconventional Weyl nodes in these tellurium two-dimensional sheets.
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ISSN:1748-3387
1748-3395
1748-3395
DOI:10.1038/s41565-020-0715-4