Improvement of channel-carrier mobility in 4H-SiC MOSFETs correlated with passivation of very fast interface traps using sodium enhanced oxidation

Very fast interface traps have recently been suggested to be the main cause behind the rather poor inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors (MOSFETs). Using capacitance voltage analysis and conductance spectroscopy on metal oxide semiconductor cap...

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Bibliographic Details
Published inAIP advances Vol. 13; no. 5; pp. 055126 - 055126-6
Main Authors Vidarsson, Arnar M., Haasmann, Daniel, Dimitrijev, Sima, Sveinbjörnsson, Einar Ö.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.05.2023
AIP Publishing LLC
Subjects
Carrier mobility
Cryogenic temperature
Field effect transistors
Metal oxide semiconductors
MOSFETs
Oxidation
Semiconductor devices
Silicon carbide
Sodium
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Summary:Very fast interface traps have recently been suggested to be the main cause behind the rather poor inversion channel mobility in nitrided SiC metal-oxide-semiconductor-field-effect-transistors (MOSFETs). Using capacitance voltage analysis and conductance spectroscopy on metal oxide semiconductor capacitors, at cryogenic temperatures, we find that these fast traps are absent in oxides made by sodium enhanced oxidation, and high inversion channel-carrier mobility in MOSFETs made by sodium enhanced oxidation is observed.
ISSN:2158-3226
2158-3226
DOI:10.1063/5.0151589