Characterization of silicon wafer bonding for Power MEMS applications

This paper reports the investigation of low-temperature silicon wafer fusion bonding for MEMS applications. A bonding process utilizing annealing temperatures between 400 and 1100 °C was characterized. The silicon–silicon bonded interface was analyzed by infrared transmission (IT) and transmission e...

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Published inSensors and actuators. A, Physical Vol. 103; no. 1; pp. 1 - 8
Main Authors Ayón, Arturo A., Zhang, Xin, Turner, Kevin T., Choi, Dongwon, Miller, Bruno, Nagle, Steven F., Spearing, S.Mark
Format Journal Article Conference Proceeding
LanguageEnglish
Published Lausanne Elsevier B.V 15.01.2003
Elsevier Science
Subjects
Applied sciences
Electronics
Exact sciences and technology
Low temperature
Micro- and nanoelectromechanical devices (mems/nems)
Microelectronic fabrication (materials and surfaces technology)
Power MEMS
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Wafer bonding
Wafer bonding
Power MEMS
Low temperature
Infrared spectrometry
Microelectronic fabrication
Transmission electron microscopy
Temperature effect
Mechanical properties
Silicon
Experimental study
Microelectromechanical device
Fracture toughness
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Summary:This paper reports the investigation of low-temperature silicon wafer fusion bonding for MEMS applications. A bonding process utilizing annealing temperatures between 400 and 1100 °C was characterized. The silicon–silicon bonded interface was analyzed by infrared transmission (IT) and transmission electron microscopy (TEM) and the bond toughness was quantified by a four-point bending–delamination technique.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0924-4247
1873-3069
DOI:10.1016/S0924-4247(02)00329-1