Impact ionization in InAlAs/InGaAs/InAlAs HEMT's

The kink effect and excess gate current in InAlAs/InGaAs/InAlAs HEMT's have been linked to impact ionization in the high field region of the channel. In this letter, a relationship is established between experimentally measured excess gate current and the tunneling of holes from the quantum wel...

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Bibliographic Details
Published inIEEE electron device letters Vol. 21; no. 5; pp. 193 - 195
Main Authors Webster, R.T., Shangli Wu, Anwar, A.F.M.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.05.2000
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Channels
Current measurement
Devices
Electric fields
Electrons
Force sensors
Gates
HEMTs
Impact ionization
Indium compounds
Indium gallium arsenide
Indium gallium arsenides
Inverse
Ionization
MESFETs
Quantum wells
Tunneling
Voltage
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Summary:The kink effect and excess gate current in InAlAs/InGaAs/InAlAs HEMT's have been linked to impact ionization in the high field region of the channel. In this letter, a relationship is established between experimentally measured excess gate current and the tunneling of holes from the quantum well formed in the channel. The channel hole current is then obtained as the quotient of the excess gate current to the gate-voltage-dependent transmission probability. This channel hole current follows the exponential dependence of the ionization constant on the inverse electric field.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/55.841293