Fabrication of Highly Ordered Silicon Oxide Dots and Stripes from Block Copolymer Thin Films

A general route to fabricate highly ordered arrays of nanoscopic silicon oxide dots and stripes (see figure) from block copolymer thin films is described. Poly(styrene‐b‐4‐vinylpyridine) thin films with cylindrical microdomains oriented normal and parallel to the surface were used as templates for t...

Full description

Saved in:
Bibliographic Details
Published inAdvanced materials (Weinheim) Vol. 20; no. 4; pp. 681 - 685
Main Authors Park, S., Kim, B., Wang, J.-Y., Russell, T. P.
Format Journal Article
LanguageEnglish
Published Weinheim WILEY-VCH Verlag 18.02.2008
WILEY‐VCH Verlag
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:A general route to fabricate highly ordered arrays of nanoscopic silicon oxide dots and stripes (see figure) from block copolymer thin films is described. Poly(styrene‐b‐4‐vinylpyridine) thin films with cylindrical microdomains oriented normal and parallel to the surface were used as templates for the fabrication of nanoscopic silicon oxide, with polydimethylsiloxane as the inorganic precursor.
Bibliography:NSF supported MRSEC and NSEC at the University of Massachusetts Amherst
U.S. Department of Energy (DOE)
istex:921814CAD0A80B44C63116E6779173BAF01384C4
ArticleID:ADMA200701997
Korea Research Foundation Grant funded by the Korean Government - No. KRF-2006-214-D00047
ark:/67375/WNG-L01PP5TX-K
This work was supported by the U.S. Department of Energy (DOE), the NSF supported MRSEC and NSEC at the University of Massachusetts Amherst, and S.P. was supported by a Korea Research Foundation Grant funded by the Korean Government (KRF-2006-214-D00047).
This work was supported by the U.S. Department of Energy (DOE), the NSF supported MRSEC and NSEC at the University of Massachusetts Amherst, and S.P. was supported by a Korea Research Foundation Grant funded by the Korean Government (KRF‐2006‐214‐D00047).
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200701997