Recombination channels in optically excited graphene

We present a theoretical study on the efficiency of non‐radiative recombination channels in optically excited graphene on a substrate. We find that depending on the strength of the excitation pulse and the dielectric constant of the applied substrate, either Auger or phonon‐induced recombination pre...

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Bibliographic Details
Published inGraphene-Based Revolutions in ICT And Beyond (Graphene Flagship) Vol. 252; no. 11; pp. 2456 - 2460
Main Authors Jago, Roland, Winzer, Torben, Malic, Ermin
Format Journal Article
LanguageEnglish
Published Blackwell Publishing Ltd 01.11.2015
Subjects
Auger scattering
Augers
Carrier dynamics
Carrier recombination
carrier-phonon scattering
Channels
Coulomb friction
Dielectric constant
Excitation
Graphene
recombination channels
Solid state physics
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Summary:We present a theoretical study on the efficiency of non‐radiative recombination channels in optically excited graphene on a substrate. We find that depending on the strength of the excitation pulse and the dielectric constant of the applied substrate, either Auger or phonon‐induced recombination prevails. The favorable conditions for Auger recombination are (i) strong excitation regime providing a large number of scattering partners and (ii) low‐dielectric substrates, which only weakly screen the Coulomb interaction. The gained insights are important for achieving a population inversion in graphene that is temporally limited by the presented recombination channels. Carrier recombination channels in optically excited graphene.
Bibliography:istex:4DA6251BAEE0BA578693F709CC5C16BB04B1535E
ArticleID:PSSB201552425
ark:/67375/WNG-H0JS98TR-W
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0370-1972
1521-3951
1521-3951
DOI:10.1002/pssb.201552425