Properties of high resistivity CoPdAlO film for possibility of application to RF integrated inductor

• Published in: IEEE transactions on magnetics Vol. 37; no. 4; pp. 2255 - 2257
• Main Authors: Taek-Soo Kim, Suezawa, K., Yamaguchi, M., Arai, K., Shimada, Y., Chong-Oh Kim
• Format: Journal Article Conference Proceeding
• Language: English
• Published: New York, NY IEEE 01.07.2001; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Cell phones; Cellular; Cellular phones; Cobalt; Code division multiple access; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity; Devices; Exact sciences and technology; Inductors; Magnetic films; Magnetic properties and materials; Magnetic properties of monolayers and thin films; Magnetic properties of surface, thin films and multilayers; Magnetism; Microwave devices; Microwave integrated circuits; MMICs; Monolithic integrated circuits; Multiaccess communication; Palladium; Physics; Thin film inductors; Wideband; Cobalt oxides; Magnetic hysteresis; XRD; Experimental study; Frequency effect; Sputtering; Granular structure; Thin films; Ferromagnetic resonance; Hysteresis loop; Magnetic permeability; Monolithic integrated circuits; Physical vapor deposition; Microwave circuits; Palladium oxides; Quaternary compounds; Aluminium oxides; Magnetic properties
• ISSN: 0018-9464; 1941-0069
• DOI: 10.1109/20.951140

Presently, an inductor adapted at MMIC (Monolithic microwave integrated circuit) which is used for cellular phone or PHS operates at quasimicrowave range over 800 MHz. However, a W-CDMA (Wideband code division multiple access) will use about 2 GHz range. Therefore magnetic film devices should be compatible up to 2 GHz. We deposited Co-Pd-Al-O system film using rf sputtering method which is expected for operating at 2 GHz, and investigated the effect of Pd content and magnetic field annealing. When Pd composition is 19%, H/sub k/ was 118 Oe, and showed flat frequency characteristics until 1.5 GHz. The Q factor (=/spl mu/'//spl mu/") was 23.3 at 1 GHz, 6.7 at 1.5 GHz and 1.5 at 2 GHz, respectively. Resonance frequency was 2.9 GHz, therefore Co-Pd-Al-O thin film could be used at over 1 GHz, and also expected as an inductor material for next generation MMIC.