GaInP/GaAs and mechanically stacked GaInAs solar cells grown by MOCVD using TBAs and TBP as V-precursors

• Published in: Solar energy materials and solar cells Vol. 66; no. 1; pp. 585 - 592
• Main Authors: Moto, Akihiro, Tanaka, So, Tanabe, Tatsuya, Takagishi, Shigenori
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.02.2001; Elsevier
• Subjects: Applied sciences; Energy; Exact sciences and technology; GaAs/GaInAs; GaInP/GaAs; Natural energy; Photovoltaic conversion; Solar cells; Solar cells. Photoelectrochemical cells; Solar energy; TBAs; TBP; Solar cells; GaInP/GaAs; TBP; GaAs/GaInAs; TBAs; Gallium arsenides; Semiconductor materials; Voltage current curve; Electrical properties; Gallium phosphide; p i n junctions; Tandem mount; MOCVD; Precursor; Multijunction structure; Indium arsenides; Indium phosphide; Solar cell; Quantum efficiency; Tunnel junction; Manufacturing; Performance
• ISSN: 0927-0248; 1879-3398
• DOI: 10.1016/S0927-0248(00)00243-9

We have applied metallorganic chemical vapor deposition (MOCVD) using less toxic group V-precursors to the fabrication of the monolithic dual-junction GaInP/GaAs and mechanically-stacked GaAs/GaInAs cells, targeting for the super-high-efficiency triple-junction GaInP/GaAs/GaInAs solar cells. The dual-junction GaInP/GaAs cell grown on an n-type GaAs substrate, which is suitable for higher optical transmittance to the bottom cell, showed a conversion efficiency of 25.9% at AM 1.5, 1-sun. Combined with an efficiency of 5.1% for GaInAs bottom cell grown on an InP substrate under the mechanically stacked GaAs top cell, it is possible to attain an efficiency of over 30% by the all organometallic-source MOCVD method.