High-Power and High-Speed Zn-Diffusion Single Fundamental-Mode Vertical-Cavity Surface-Emitting Lasers at 850-nm Wavelength

• Published in: IEEE photonics technology letters Vol. 20; no. 13; pp. 1121 - 1123
• Main Authors: Shi, J.-W., Chen, C.-C., Wu, Y.-S., Guol, S.-H., Chihping Kuo, Ying-Jay Yang
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.07.2008; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Bias; Current efficiency; High speed; High speed optical techniques; Modulation; Optical arrays; Optical crosstalk; Optical surface waves; Power generation; Quantum well devices; Semiconductor laser; Surface emitting lasers; Surface waves; Threshold current; Threshold currents; Vertical cavity surface emission lasers; Vertical cavity surface emitting lasers; vertical-cavity surface- emitting laser (VCSEL); Wavelengths; Zinc
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/LPT.2008.924645

We demonstrate a high-performance Zn-diffusion single-mode 850-nm vertical-cavity surface-emitting laser, which has a low threshold current (0.5 mA), high differential efficiency (80%), high modulation current efficiency (8.2 GHz/mA), and can sustain the single fundamental-mode output with a maximum output power of 7.3 mW under the full range of bias currents. With this device we can achieve 10 Gb/s eye-opening at a low bias current (1.8 mA) and a peak-to-peak driving-voltage of 0.5 V, which corresponds to a very high data-rate/power-dissipation ratio of 6.5 Gps/mW.