Exploring the Properties of Niobium Oxide Films for Electron Transport Layers in Perovskite Solar Cells

In this work, niobium oxide films were deposited by reactive magnetron sputtering under different oxygen flow rate and applied as electron transport layer in perovskite solar cells. It was found that the deposition made using 3.5 sccm of oxygen flow resulted in films with better electrical propertie...

Full description

Saved in:
Bibliographic Details
Published inFrontiers in chemistry Vol. 7; p. 50
Main Authors Fernandes, Silvia Leticia, Albano, Luiz Gustavo Simão, Affonço, Lucas Jorge, da Silva, José Humberto Dias, Longo, Elson, Graeff, Carlos Frederico de Oliveira
Format Journal Article
LanguageEnglish
Published Switzerland Frontiers Media S.A 06.02.2019
Subjects
Chemistry
electron transport layer
methyl ammonium lead iodide
niobium oxide film
perovskite solar cell
reactive sputtering
methyl ammonium lead iodide
perovskite solar cell
electron transport layer
reactive sputtering
niobium oxide film
Online AccessGet full text

Cover

More Information
Summary:In this work, niobium oxide films were deposited by reactive magnetron sputtering under different oxygen flow rate and applied as electron transport layer in perovskite solar cells. It was found that the deposition made using 3.5 sccm of oxygen flow resulted in films with better electrical properties which helped the extraction of the photogenerated electrons to the external circuit, improving the J and consequently the device efficiency. In addition, by photoluminescence measurements, we found a better charge transfer from perovskite to TiO /niobium oxide film deposited at 3.5 sccm of oxygen flow.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
Reviewed by: Ren Zhang, Intel, United States; Thomas Stergiopoulos, Aristotle University of Thessaloniki, Greece
This article was submitted to Physical Chemistry and Chemical Physics, a section of the journal Frontiers in Chemistry
Edited by: Sotiris Sotiropoulos, Aristotle University of Thessaloniki, Greece
ISSN:2296-2646
2296-2646
DOI:10.3389/fchem.2019.00050