Curvature-induced metallization of double-walled semiconducting zigzag carbon nanotubes
We report total-energy electronic-structure calculations that provide energetics and electronic structures of double-walled carbon nanotubes consisting of semiconducting (n,0) nanotubes. We find that optimum spacing between the walls of the nanotubes is slightly larger than the interlayer spacing of...
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| Published in | Physical review letters Vol. 91; no. 21; p. 216801 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
United States
21.11.2003
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| Online Access | Get more information |
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| Summary: | We report total-energy electronic-structure calculations that provide energetics and electronic structures of double-walled carbon nanotubes consisting of semiconducting (n,0) nanotubes. We find that optimum spacing between the walls of the nanotubes is slightly larger than the interlayer spacing of the graphite. We also find that the electronic structures of the double-walled nanotubes with the inner (7,0) nanotube are metallic with multicarrier characters in which electrons and holes exist on inner and outer nanotubes, respectively. Interwall spacing and curvature difference are found to be essential for the electron states around the Fermi level. |
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| ISSN: | 0031-9007 |
| DOI: | 10.1103/physrevlett.91.216801 |