Partial dislocations in the X-ray topography of as-grown hexagonal silicon carbide crystals

• Published in: Materials science & engineering. B, Solid-state materials for advanced technology Vol. 87; no. 2; pp. 173 - 177
• Main Authors: Vetter, William M, Dudley, Michael
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.11.2001; Elsevier
• Subjects: Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.); Dislocations; Exact sciences and technology; Linear defects: dislocations, disclinations; Physics; Silicon carbide crystals; Structure of solids and liquids; crystallography; X-ray topographs; X-ray topographs; Silicon carbide crystals; Dislocations; Hexagonal lattices; Inorganic compounds; Transmission electron microscopy; Wafers; Physical vapor deposition; Silicon carbides; Crystal growth from vapors; Partial dislocation; Experimental study; Carbides; X-ray topography
• ISSN: 0921-5107; 1873-4944
• DOI: 10.1016/S0921-5107(01)00738-3

Dislocations visible in X-ray topographs of as-grown hexagonal silicon carbide Lely platelets and physical vapor transport process wafers extinguished as if they had Burgers vectors of 1/3〈 11 2 ̄ 0 〉. Under the electron microscope, beneath the resolution of X-ray topography, short lengths of these dislocations were shown to consist of pairs of 1/3〈 10 1 ̄ 0 〉 Shockley partials spanning narrow ribbons of stacking fault. An unusual example of a b =1/3〈 11 2 ̄ 0 〉 dislocation in a Lely platelet visibly separated into its partials in an X-ray topograph was presented.