The effect of interface states on amorphous-silicon transistors

The properties of the interface where silicon nitride is deposited on top of a-Si:H have been investigated using two types of thin-film transistor (TFT) structure: a top-gate TFT with nitride gate dielectric and a bottom-gate TFT with a nitride passivation layer. TFT characteristics depend strongly...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 36; no. 12; pp. 2971 - 2972
Main Authors Ibaraki, N., Fukuda, K., Takata, H.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.12.1989
Institute of Electrical and Electronics Engineers
Subjects
Amorphous silicon
Applied sciences
Dielectric substrates
Electron optics
Electronics
Exact sciences and technology
Interface states
Optical films
Optical pumping
Optical sensors
Passivation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor films
Thin film transistors
Transistors
Thickness
Field effect transistor
Silicon
Thin film transistor
Amorphous state
Manufacturing
Electrical characteristic
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Summary:The properties of the interface where silicon nitride is deposited on top of a-Si:H have been investigated using two types of thin-film transistor (TFT) structure: a top-gate TFT with nitride gate dielectric and a bottom-gate TFT with a nitride passivation layer. TFT characteristics depend strongly on the nitride properties and the thickness of the a-Si:H, particularly at thicknesses less than 3000 AA. Results are interpreted in terms of the effect of interface states.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.40965