Effect of inhomogeneous line broadening on gain and differential gain of quantum dot lasers

Detailed theoretical analysis of the size fluctuation in InAs-GaAs quantum dot (QD) lasers is presented. Analytical expressions for the inhomogeneous line broadening and the optical gain are derived for a Gaussian size fluctuation distribution. The effect of size fluctuations on the QD carrier densi...

Full description

Saved in:
Bibliographic Details
Published inIEEE transactions on electron devices Vol. 50; no. 7; pp. 1575 - 1581
Main Author Qasaimeh, O.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.07.2003
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Charge carrier density
Doppler effect
Fluctuation
Gain
Gallium compounds
Gaussian
Gaussian distributions
Indium compounds
Lasers
Line broadening
Quantum dots
Standard deviation
Online AccessGet full text

Cover

More Information
Summary:Detailed theoretical analysis of the size fluctuation in InAs-GaAs quantum dot (QD) lasers is presented. Analytical expressions for the inhomogeneous line broadening and the optical gain are derived for a Gaussian size fluctuation distribution. The effect of size fluctuations on the QD carrier density, modal gain, and differential gain is studied. Red shifts in the gain peak is observed when size fluctuations increases. The energy detuning between the gain peak and the differential gain peak for a pyramidal quantum dot system having an average base length of 130 /spl Aring/ and standard deviation of 7 /spl Aring/ is about 12 meV.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ObjectType-Article-2
ObjectType-Feature-1
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2003.813907