Monolithic Integration of a Folded Dipole Antenna With a 24-GHz Receiver in SiGe HBT Technology

• Published in: IEEE transactions on microwave theory and techniques Vol. 55; no. 7; pp. 1467 - 1475
• Main Authors: Ojefors, E.., Sonmez, E.., Chartier, S., Lindberg, P.., Schick, C.., Rydberg, A.., Schumacher, H..
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.07.2007; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Antennas; Applied sciences; Circuit properties; Conversion; Crosstalk; Design. Technologies. Operation analysis. Testing; Dipole antennas; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Gain; Germanium silicon alloys; Heterojunction bipolar transistors; heterojunction bipolar transistors (HBTs); Integrated circuit technology; Integrated circuits; Magnetic devices; Manufacturing processes; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits; Microwaves; Monolithic integrated circuits; monolithic microwave integrated circuit (MMIC) receivers; Power consumption; Radiocommunications; Receivers; Receiving antennas; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon germanides; Silicon germanium; Spirals; TECHNOLOGY; TEKNIKVETENSKAP; Telecommunications; Telecommunications and information theory; Performance evaluation; Semiconductor alloys; Dipole antennas; Crosstalk; Dipole antenna; Inductor; Implementation; Folded dipole antenna; Integrated antenna; monolithic microwave integrated circuit (MMIC) receivers; Power consumption; Transmitting antenna; heterojunction bipolar transistors (HBTs); Microwave receiver; Heterojunction bipolar transistors; Monolithic integrated circuit; MMIC; Gain; Spiral antenna
• ISSN: 0018-9480; 1557-9670; 1557-9670
• DOI: 10.1109/TMTT.2007.900315

The integration of an on-chip folded dipole antenna with a monolithic 24-GHz receiver manufactured in a 0.8-mum SiGe HBT process is presented. A high-resistivity silicon substrate (1000 Omega ldr cm) is used for the implemented circuit to improve the efficiency of the integrated antenna. Crosstalk between the antenna and spiral inductors is analyzed and isolation techniques are described. The receiver, including the receive and an optional transmit antenna, requires a chip area of 4.5 mm 2 and provides 30-dB conversion gain at 24 GHz with a power consumption of 960 mW.