Comparisons of Performance Potentials of Silicon Nanowire and Graphene Nanoribbon MOSFETs Considering First-Principles Bandstructure Effects

• Published in: IEEE transactions on electron devices Vol. 57; no. 2; pp. 406 - 414
• Main Authors: Tsuchiya, H., Ando, H., Sawamoto, S., Maegawa, T., Hara, T., Yao, H., Ogawa, M.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.02.2010; Institute of Electrical and Electronics Engineers; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Applied sciences; Ballistic transport; bandstructure; Computational modeling; Devices; Effective mass; Electronics; Exact sciences and technology; first-principles calculation; Graphene; graphene nanoribbon (GNR); Logic gates; Molecular electronics, nanoelectronics; MOSFETs; Nanocomposites; Nanomaterials; Nanostructure; nanotransistors; Nanowires; Performance evaluation; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Silicon; silicon nanowire (SNW); Transistors; Wire; Ultrathin films; Performance evaluation; Band structure; MOSFET; silicon nanowire (SNW); first-principles calculation; nano-transistors; Nanotape; Ballistic transport; Nanoelectronics; Energy gap; graphene nanoribbon (GNR); bandstructure; Graphene; Zero band gap semiconductors; Delay time; Nanowires; Comparative study
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2009.2037365

In this paper, we investigate the performance potentials of silicon nanowire (SNW) and semiconducting graphene nanoribbon (GNR) MOSFETs by using first-principles bandstructures and ballistic current estimation based on the ¿top-of-the-barrier¿ model. As a result, we found that SNW-MOSFETs display a strong orientation dependence via the atomistic bandstructure effects, and SNW-MOSFETs provide smaller intrinsic device delays than Si ultrathin-body MOSFETs when the wire size is scaled smaller than 3 nm. Furthermore, GNR-MOSFETs are found to exhibit promising device performance if the ribbon width is designed to be larger than a few nanometers and a finite band gap can be established.