Microtexture of chloride treated CdTe thin films deposited by CSS technique

This work investigates the microstructural changes—especially in grain boundary structure and grain orientation distribution—in CdTe thin films deposited by close spaced sublimation at low (LT) and high temperatures (HT) and submitted to a CdCl₂ heat treatment. These changes are quantitatively descr...

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Bibliographic Details
Published inJournal of materials science Vol. 43; no. 2; pp. 573 - 579
Main Authors Quadros, João, Pinto, André L, Moutinho, Hélio R, Dhere, Ramesh G, Cruz, Leila R
Format Journal Article Conference Proceeding
LanguageEnglish
Published Boston Springer US 01.01.2008
Springer
Springer Nature B.V
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Summary:This work investigates the microstructural changes—especially in grain boundary structure and grain orientation distribution—in CdTe thin films deposited by close spaced sublimation at low (LT) and high temperatures (HT) and submitted to a CdCl₂ heat treatment. These changes are quantitatively described by microtexture analysis, a spatial distribution of the orientation of the grains. The analysis is performed in a scanning electron microscope by means of identification of the electron back-scattered diffraction patterns from individual grains. The texture of each grain, the misorientation between grains, and coincident site lattice boundary maps are obtained. The results show that the CdCl₂ treatment did not promote significant microstructural changes in HT-CdTe films, which grow with large and randomly oriented grains, and with a predominance of high-angle boundaries. On the other hand, for LT-CdTe films, this treatment promotes a substantial increase in grain size, a decreasing of preferential orientation, and an increase in the number of CSL and high-angle boundaries. These changes are considered to be a strong evidence for recrystallization.
Bibliography:http://dx.doi.org/10.1007/s10853-007-1708-5
ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
USDOE
NREL/JA-520-42925
AC36-08GO28308
ISSN:0022-2461
1573-4803
DOI:10.1007/s10853-007-1708-5