Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing
Large stable ferroelectricity in nanoscale undoped zirconia (ZrO2) thin films prepared without post-annealing has been demonstrated for the first time. Remanent polarizations up to 12μCcm−2 were obtained in the as-deposited ZrO2 thin films prepared by remote plasma atomic layer deposition at 300°C s...
Saved in:
| Published in | Journal of the European Ceramic Society Vol. 37; no. 3; pp. 1135 - 1139 |
|---|---|
| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier Ltd
01.03.2017
|
| Subjects | |
| Online Access | Get full text |
| ISSN | 0955-2219 1873-619X |
| DOI | 10.1016/j.jeurceramsoc.2016.10.028 |
Cover
Loading…
| Abstract | Large stable ferroelectricity in nanoscale undoped zirconia (ZrO2) thin films prepared without post-annealing has been demonstrated for the first time. Remanent polarizations up to 12μCcm−2 were obtained in the as-deposited ZrO2 thin films prepared by remote plasma atomic layer deposition at 300°C substrate temperature on the Pt electrode. Ferroelectric crystallization of the films was achieved without post-annealing, which is highly beneficial to the application of the films in non-volatile memories and ultralow-power nanoelectronics. The existence of the ferroelectric orthorhombic phase with noncentrosymmetric space group Pbc21 in the as-deposited ZrO2 thin films was confirmed by high-resolution transmission electron microscopy. |
|---|---|
| AbstractList | Large stable ferroelectricity in nanoscale undoped zirconia (ZrO2) thin films prepared without post-annealing has been demonstrated for the first time. Remanent polarizations up to 12μCcm−2 were obtained in the as-deposited ZrO2 thin films prepared by remote plasma atomic layer deposition at 300°C substrate temperature on the Pt electrode. Ferroelectric crystallization of the films was achieved without post-annealing, which is highly beneficial to the application of the films in non-volatile memories and ultralow-power nanoelectronics. The existence of the ferroelectric orthorhombic phase with noncentrosymmetric space group Pbc21 in the as-deposited ZrO2 thin films was confirmed by high-resolution transmission electron microscopy. |
| Author | Lin, Bo-Ting Chen, Miin-Jang Lu, Yu-Wei Shieh, Jay |
| Author_xml | – sequence: 1 givenname: Bo-Ting surname: Lin fullname: Lin, Bo-Ting – sequence: 2 givenname: Yu-Wei surname: Lu fullname: Lu, Yu-Wei – sequence: 3 givenname: Jay surname: Shieh fullname: Shieh, Jay email: jayshieh@ntu.edu.tw – sequence: 4 givenname: Miin-Jang surname: Chen fullname: Chen, Miin-Jang email: mjchen@ntu.edu.tw |
| BookMark | eNqNkEtLAzEUhYNUsK3-h-B-apLJPOJKqa-CUBcK4iakedgM06QkqdJ_b4a6EFddXTjnngPnm4CR804DcInRDCNcX3WzTu-C1EFsopczkrVszBBpT8AYt01Z1Ji9j8AYsaoqCMHsDExi7BDCDWJsDMTCqZ1M1jvoDTQ6BK97LVOw0qY9tA464XyUotfwIywJTOusGdtvIsyZlwQP715p-G3T2u8S3PqYCuGcFr11n-fg1Ig-6ovfOwVvD_ev86fiefm4mN8-F5LWKBVtZYw0ChtJiFRYlLgkelXXRtXUiIZWjWKrVlLWsBITKlZUyZIIUtatoFTgcgquD70y-BiDNnwb7EaEPceID7B4x__C4gOswcuwcvjmXzjPFwOWFITtj6u4O1ToPPLL6sCjtNpJrWzIhLjy9piaH0ZglKk |
| CitedBy_id | crossref_primary_10_1016_j_tsf_2018_11_008 crossref_primary_10_1039_D0TA04984K crossref_primary_10_1016_j_jeurceramsoc_2019_05_065 crossref_primary_10_1021_acs_chemmater_2c03379 crossref_primary_10_1021_acsami_1c15875 crossref_primary_10_1021_acsaelm_1c00171 crossref_primary_10_1039_D0TC04025H crossref_primary_10_1063_1_5028181 crossref_primary_10_1039_C9NR05768D crossref_primary_10_1039_C7TC01200D crossref_primary_10_1063_1_4990529 crossref_primary_10_1039_D3MH01273E crossref_primary_10_1016_j_ceramint_2024_12_380 crossref_primary_10_1039_D4TA04610B crossref_primary_10_1016_j_apsusc_2022_155533 crossref_primary_10_1021_acsami_4c01234 crossref_primary_10_1063_5_0037887 crossref_primary_10_7567_1347_4065_ab00f6 crossref_primary_10_1016_j_ceramint_2021_06_212 crossref_primary_10_1038_s41563_023_01507_2 crossref_primary_10_1021_acs_jpcc_4c04096 crossref_primary_10_1088_1361_665X_ab23c3 crossref_primary_10_1103_PhysRevMaterials_2_013401 crossref_primary_10_1039_D1TC01778K crossref_primary_10_1039_D0TC01695K crossref_primary_10_1002_aelm_202200737 crossref_primary_10_1002_pssr_202100589 crossref_primary_10_1002_advs_202302770 crossref_primary_10_1016_j_actamat_2020_116536 crossref_primary_10_1103_PhysRevLett_126_015701 crossref_primary_10_1016_j_nanoen_2017_07_017 crossref_primary_10_1149_2_0021806jss crossref_primary_10_35848_1347_4065_ad21bd crossref_primary_10_1016_j_ceramint_2021_11_152 crossref_primary_10_1021_acsaelm_1c00792 crossref_primary_10_1021_acsaelm_2c00608 crossref_primary_10_2139_ssrn_3975653 crossref_primary_10_1038_s41524_023_01075_8 crossref_primary_10_1063_5_0047977 crossref_primary_10_1016_j_jeurceramsoc_2022_07_031 crossref_primary_10_1002_adma_202207736 crossref_primary_10_1002_aelm_202300649 crossref_primary_10_1016_j_apsusc_2020_146015 crossref_primary_10_1038_s41586_022_04425_6 crossref_primary_10_1016_j_ceramint_2024_05_035 crossref_primary_10_1002_admt_202400050 crossref_primary_10_1039_D1NR02667D crossref_primary_10_1063_1_5063757 crossref_primary_10_1088_1361_6528_ad6871 crossref_primary_10_1002_admi_201900471 crossref_primary_10_1016_j_nantod_2024_102470 crossref_primary_10_1021_acsaelm_1c00122 crossref_primary_10_1109_TED_2021_3118665 crossref_primary_10_1016_j_mssp_2023_107553 crossref_primary_10_1038_s41467_022_28860_1 crossref_primary_10_1016_j_matdes_2020_109020 crossref_primary_10_3740_MRSK_2020_30_9_480 crossref_primary_10_1016_j_actamat_2022_118091 crossref_primary_10_1021_acsaelm_2c00558 crossref_primary_10_1021_acsaelm_1c00161 crossref_primary_10_1039_C9TC05157K crossref_primary_10_3762_bjnano_9_14 crossref_primary_10_1063_5_0076929 crossref_primary_10_1063_5_0002835 crossref_primary_10_35848_1347_4065_ab80de crossref_primary_10_1038_s42005_019_0120_1 crossref_primary_10_1002_aelm_201700489 crossref_primary_10_1002_advs_202207390 crossref_primary_10_1016_j_ceramint_2021_02_259 crossref_primary_10_1016_j_ceramint_2023_09_027 crossref_primary_10_1002_admt_202401075 crossref_primary_10_1039_C7NR02121F |
| Cites_doi | 10.1063/1.3634052 10.1088/0960-1317/10/2/307 10.1063/1.4922272 10.1002/adfm.201103119 10.1016/j.actamat.2007.01.012 10.1063/1.4915336 10.1016/j.jcrysgro.2003.12.048 10.1021/nl5017255 10.1103/PhysRevLett.94.246802 10.1038/nnano.2008.18 10.1103/PhysRevB.90.140103 10.1063/1.111557 10.1016/j.mee.2005.04.084 10.1111/j.1151-2916.1989.tb06322.x 10.1149/2.002301jss 10.1103/PhysRevB.65.233106 10.4028/www.scientific.net/KEM.206-213.1285 10.1021/nl071804g 10.1088/0022-3727/43/2/025404 10.1021/j100112a043 10.1103/PhysRevB.72.125341 10.1111/j.1551-2916.2009.03061.x 10.1038/nnano.2011.213 10.1021/nl302049k 10.1063/1.4811483 10.1063/1.4939660 10.1016/j.actamat.2016.05.029 10.1126/science.246.4936.1400 10.1063/1.4829064 10.1063/1.3667205 10.1103/PhysRevB.60.14485 |
| ContentType | Journal Article |
| Copyright | 2016 Elsevier Ltd |
| Copyright_xml | – notice: 2016 Elsevier Ltd |
| DBID | AAYXX CITATION |
| DOI | 10.1016/j.jeurceramsoc.2016.10.028 |
| DatabaseName | CrossRef |
| DatabaseTitle | CrossRef |
| DatabaseTitleList | |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| EISSN | 1873-619X |
| EndPage | 1139 |
| ExternalDocumentID | 10_1016_j_jeurceramsoc_2016_10_028 S0955221916305805 |
| GroupedDBID | --K --M -~X .~1 0R~ 1B1 1~. 1~5 29L 4.4 457 4G. 5GY 5VS 7-5 71M 8P~ 9JN AABNK AABXZ AACTN AAEDT AAEDW AAEPC AAIAV AAIKJ AAKOC AALRI AAOAW AAQFI AAQXK AAXUO ABFNM ABJNI ABMAC ABXDB ABXRA ABYKQ ACDAQ ACGFS ACNNM ACRLP ADBBV ADEZE ADMUD AEBSH AEKER AENEX AEZYN AFKWA AFRZQ AFTJW AGHFR AGUBO AGYEJ AHHHB AIEXJ AIKHN AITUG AJBFU AJOXV ALMA_UNASSIGNED_HOLDINGS AMFUW AMRAJ ASPBG AVWKF AXJTR AZFZN BKOJK BLXMC CS3 DU5 EBS EFJIC EFLBG EJD EO8 EO9 EP2 EP3 FDB FEDTE FGOYB FIRID FNPLU FYGXN G-2 G-Q GBLVA HVGLF HZ~ IHE J1W KOM M24 M41 MAGPM MO0 N9A O-L O9- OAUVE OZT P-8 P-9 P2P PC. Q38 R2- RIG RNS ROL RPZ SDF SDG SES SEW SMS SPC SPCBC SSM SSZ T5K TN5 WUQ XPP ZMT ~G- AATTM AAXKI AAYWO AAYXX ABWVN ACRPL ACVFH ADCNI ADNMO AEIPS AEUPX AFJKZ AFPUW AGCQF AGQPQ AGRNS AIGII AIIUN AKBMS AKRWK AKYEP ANKPU APXCP BNPGV CITATION SSH |
| ID | FETCH-LOGICAL-c460t-85ffcfd1fc22cd1a3132eb66fd64fa7457d9b8c49793124ab4dc32a2368a44a13 |
| IEDL.DBID | .~1 |
| ISSN | 0955-2219 |
| IngestDate | Thu Apr 24 23:00:30 EDT 2025 Tue Jul 01 03:59:01 EDT 2025 Fri Feb 23 02:20:32 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Issue | 3 |
| Keywords | Zirconia Thin films Ferroelectricity Atomic layer deposition TEM |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c460t-85ffcfd1fc22cd1a3132eb66fd64fa7457d9b8c49793124ab4dc32a2368a44a13 |
| PageCount | 5 |
| ParticipantIDs | crossref_primary_10_1016_j_jeurceramsoc_2016_10_028 crossref_citationtrail_10_1016_j_jeurceramsoc_2016_10_028 elsevier_sciencedirect_doi_10_1016_j_jeurceramsoc_2016_10_028 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | 2017-03-01 |
| PublicationDateYYYYMMDD | 2017-03-01 |
| PublicationDate_xml | – month: 03 year: 2017 text: 2017-03-01 day: 01 |
| PublicationDecade | 2010 |
| PublicationTitle | Journal of the European Ceramic Society |
| PublicationYear | 2017 |
| Publisher | Elsevier Ltd |
| Publisher_xml | – name: Elsevier Ltd |
| References | Kohlstedt, Pertsev, Contreras, Waser (bib0030) 2005; 72 Fan, Deng, Wang, Liu, Yang, Xiao, Yan, Dong, Wang, Chen (bib0120) 2016; 108 Lu, Shieh, Tsai (bib0130) 2016; 115 Zhao, Roebben, Heyns, Van der Biest (bib0125) 2002; 206 Zhirnov, Cavin (bib0040) 2008; 3 Shieh, Lin, Chen (bib0060) 2010; 43 Zhou, Xu, Li, Guan, Cao, Dong, Müller, Schenk, Schröder (bib0105) 2013; 103 Polakowski, Müller (bib0075) 2015; 106 Akai, Hirabayashi, Yokawa, Sawada, Ishida (bib0140) 2004; 264 Appleby, Ponon, Kwa, Zou, Petrov, Wang, Alford, O’Neill (bib0045) 2014; 14 Mueller, Mueller, Singh, Riedel, Sundqvist, Schroeder, Mikolajick (bib0090) 2012; 22 Mueller, Adelmann, Singh, Van Elshocht, Schroeder, Mikolajick (bib0095) 2012; 1 Chanthbouala, Crassous, Garcia, Bouzehouane, Fusil, Moya, Allibe, Dlubak, Grollier, Xavier, Deranlot, Moshar, Proksch, Mathur, Bibes, Barthélémy (bib0020) 2012; 7 Scott, Paz de Araujo (bib0010) 1989; 246 Kwei, Lawson, Billinge, Cheong (bib0065) 1993; 97 Salahuddin, Datta (bib0035) 2008; 8 Müller, Böscke, Schröder, Mueller, Bräuhaus, Böttger, Frey, Mikolajick (bib0070) 2012; 12 Kisi, Howard, Hill (bib0155) 1989; 72 Kohlstedt, Mustafa, Gerber, Petraru, Fitsilis, Meyer, Böttger, Waser (bib0015) 2005; 80 Zhuravlev, Sabirianov, Jaswal, Tsymbal (bib0025) 2005; 94 Reyes-Lillo, Garrity, Rabe (bib0115) 2014; 90 Muralt (bib0005) 2000; 10 Ramesh, Lee, Sands, Keramidas, Auciello (bib0135) 1994; 64 Shimizu, Yokouchi, Oikawa, Shiraishi, Kiguchi, Akama, Konno, Gruverman, Funakubo (bib0100) 2015; 106 Böscke, Müller, Bräuhaus, Schröder, Böttger (bib0080) 2011; 99 Zhao, Vanderbilt (bib0110) 2002; 65 Lowther, Dewhurst, Leger, Haines (bib0145) 1999; 60 Shieh, Wu, Chen (bib0055) 2007; 55 Müller, Schröder, Böscke, Müller, Böttger, Wilde, Sundqvist, Lemberger, Kücher, Mikolajick, Frey (bib0085) 2011; 110 Park, Kim, Kim, Lee, Moon, Hwang (bib0150) 2013; 102 Rödel, Jo, Seifert, Anton, Granzow, Damjanovic (bib0050) 2009; 92 Chanthbouala (10.1016/j.jeurceramsoc.2016.10.028_bib0020) 2012; 7 Zhao (10.1016/j.jeurceramsoc.2016.10.028_bib0125) 2002; 206 Scott (10.1016/j.jeurceramsoc.2016.10.028_bib0010) 1989; 246 Appleby (10.1016/j.jeurceramsoc.2016.10.028_bib0045) 2014; 14 Shimizu (10.1016/j.jeurceramsoc.2016.10.028_bib0100) 2015; 106 Zhao (10.1016/j.jeurceramsoc.2016.10.028_bib0110) 2002; 65 Lowther (10.1016/j.jeurceramsoc.2016.10.028_bib0145) 1999; 60 Shieh (10.1016/j.jeurceramsoc.2016.10.028_bib0060) 2010; 43 Zhirnov (10.1016/j.jeurceramsoc.2016.10.028_bib0040) 2008; 3 Mueller (10.1016/j.jeurceramsoc.2016.10.028_bib0090) 2012; 22 Mueller (10.1016/j.jeurceramsoc.2016.10.028_bib0095) 2012; 1 Ramesh (10.1016/j.jeurceramsoc.2016.10.028_bib0135) 1994; 64 Kohlstedt (10.1016/j.jeurceramsoc.2016.10.028_bib0030) 2005; 72 Polakowski (10.1016/j.jeurceramsoc.2016.10.028_bib0075) 2015; 106 Müller (10.1016/j.jeurceramsoc.2016.10.028_bib0070) 2012; 12 Böscke (10.1016/j.jeurceramsoc.2016.10.028_bib0080) 2011; 99 Park (10.1016/j.jeurceramsoc.2016.10.028_bib0150) 2013; 102 Fan (10.1016/j.jeurceramsoc.2016.10.028_bib0120) 2016; 108 Muralt (10.1016/j.jeurceramsoc.2016.10.028_bib0005) 2000; 10 Reyes-Lillo (10.1016/j.jeurceramsoc.2016.10.028_bib0115) 2014; 90 Salahuddin (10.1016/j.jeurceramsoc.2016.10.028_bib0035) 2008; 8 Kohlstedt (10.1016/j.jeurceramsoc.2016.10.028_bib0015) 2005; 80 Zhuravlev (10.1016/j.jeurceramsoc.2016.10.028_bib0025) 2005; 94 Zhou (10.1016/j.jeurceramsoc.2016.10.028_bib0105) 2013; 103 Akai (10.1016/j.jeurceramsoc.2016.10.028_bib0140) 2004; 264 Müller (10.1016/j.jeurceramsoc.2016.10.028_bib0085) 2011; 110 Rödel (10.1016/j.jeurceramsoc.2016.10.028_bib0050) 2009; 92 Lu (10.1016/j.jeurceramsoc.2016.10.028_bib0130) 2016; 115 Shieh (10.1016/j.jeurceramsoc.2016.10.028_bib0055) 2007; 55 Kisi (10.1016/j.jeurceramsoc.2016.10.028_bib0155) 1989; 72 Kwei (10.1016/j.jeurceramsoc.2016.10.028_bib0065) 1993; 97 |
| References_xml | – volume: 115 start-page: 68 year: 2016 end-page: 75 ident: bib0130 article-title: Induction of ferroelectricity in nanoscale ZrO publication-title: Acta Mater. – volume: 1 start-page: N123 year: 2012 end-page: N126 ident: bib0095 article-title: Ferroelectricity in Gd-doped HfO publication-title: ECS J. Solid State Sci. Technol. – volume: 108 start-page: 012906 year: 2016 ident: bib0120 article-title: Ferroelectricity emerging in strained (111)-textured ZrO publication-title: Appl. Phys. Lett. – volume: 90 start-page: 140103 year: 2014 ident: bib0115 article-title: Antiferroelectricity in thin-film ZrO publication-title: Phys. Rev. B – volume: 8 start-page: 405 year: 2008 end-page: 410 ident: bib0035 article-title: Use of negative capacitance to provide voltage amplification for low power nanoscale devices publication-title: Nano Lett. – volume: 64 start-page: 2511 year: 1994 end-page: 2513 ident: bib0135 article-title: Oriented ferroelectric La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O heterostructures on [001] Pt/SiO publication-title: Appl. Phys. Lett. – volume: 110 start-page: 114113 year: 2011 ident: bib0085 article-title: Ferroelectricity in yttrium-doped hafnium oxide publication-title: J. Appl. Phys. – volume: 60 start-page: 14485 year: 1999 end-page: 14488 ident: bib0145 article-title: Relative stability of ZrO publication-title: Phys. Rev. B – volume: 72 start-page: 1757 year: 1989 end-page: 1760 ident: bib0155 article-title: Crystal-structure of orthorhombic zirconia in partially stablished zirconia publication-title: J. Am. Ceram. Soc. – volume: 72 start-page: 125341 year: 2005 ident: bib0030 article-title: Theoretical current-voltage characteristics of ferroelectric tunnel junctions publication-title: Phys. Rev. B – volume: 65 start-page: 233106 year: 2002 ident: bib0110 article-title: First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide publication-title: Phys. Rev. B – volume: 43 start-page: 025404 year: 2010 ident: bib0060 article-title: Intricate straining of manganese-doped (Bi publication-title: J. Phys. D Appl. Phys. – volume: 10 start-page: 136 year: 2000 end-page: 146 ident: bib0005 article-title: Ferroelectric thin films for micro-sensors and actuators: a review publication-title: J. Micromech. Microeng. – volume: 80 start-page: 296 year: 2005 end-page: 304 ident: bib0015 article-title: Current status and challenges of ferroelectric memory devices publication-title: Microelectron. Eng. – volume: 94 start-page: 246802 year: 2005 ident: bib0025 article-title: Giant electroresistance in ferroelectric tunnel junctions publication-title: Phys. Rev. Lett. – volume: 246 start-page: 1400 year: 1989 end-page: 1405 ident: bib0010 article-title: Ferroelectric memories publication-title: Science – volume: 92 start-page: 1153 year: 2009 end-page: 1177 ident: bib0050 article-title: Perspective on the development of lead-free piezoceramics publication-title: J. Am. Ceram. Soc. – volume: 3 start-page: 77 year: 2008 end-page: 78 ident: bib0040 article-title: Nanoelectronics: negative capacitance to the rescue? publication-title: Nat. Nanotechnol. – volume: 97 start-page: 2368 year: 1993 end-page: 2377 ident: bib0065 article-title: Structures of the ferroelectric phases of barium-titanate publication-title: J. Phys. Chem. – volume: 12 start-page: 4318 year: 2012 end-page: 4323 ident: bib0070 article-title: Ferroelectricity in simple binary ZrO publication-title: Nano Lett. – volume: 102 start-page: 242905 year: 2013 ident: bib0150 article-title: Evolution of phases and ferroelectric properties of thin Hf publication-title: Appl. Phys. Lett. – volume: 55 start-page: 3081 year: 2007 end-page: 3087 ident: bib0055 article-title: Switching characteristics of MPB compositions of (Bi publication-title: Acta Mater. – volume: 106 start-page: 232905 year: 2015 ident: bib0075 article-title: Ferroelectricity in undoped hafnium oxide publication-title: Appl. Phys. Lett. – volume: 264 start-page: 463 year: 2004 end-page: 467 ident: bib0140 article-title: Epitaxial growth of Pt(001) thin films on Si substrates using an epitaxial γ-Al publication-title: J. Cryst. Growth – volume: 206 start-page: 1285 year: 2002 end-page: 1288 ident: bib0125 article-title: Crystallisation and tetragonal-monoclinic transformation in ZrO publication-title: Key Eng. Mater. – volume: 106 start-page: 112904 year: 2015 ident: bib0100 article-title: Contribution of oxygen vacancies to the ferroelectric behavior of Hf publication-title: Appl. Phys. Lett. – volume: 103 start-page: 192904 year: 2013 ident: bib0105 article-title: Wake-up effects in Si-doped hafnium oxide ferroelectric thin films publication-title: Appl. Phys. Lett. – volume: 14 start-page: 3864 year: 2014 end-page: 3868 ident: bib0045 article-title: Experimental observation of negative capacitance in ferroelectrics at room temperature publication-title: Nano Lett. – volume: 22 start-page: 2412 year: 2012 end-page: 2417 ident: bib0090 article-title: Incipient ferroelectricity in Al-doped HfO publication-title: Adv. Funct. Mater. – volume: 7 start-page: 101 year: 2012 end-page: 104 ident: bib0020 article-title: Solid-state memories based on ferroelectric tunnel junctions publication-title: Nat. Nanotechnol. – volume: 99 start-page: 102903 year: 2011 ident: bib0080 article-title: Ferroelectricity in hafnium oxide thin films publication-title: Appl. Phys. Lett. – volume: 99 start-page: 102903 year: 2011 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0080 article-title: Ferroelectricity in hafnium oxide thin films publication-title: Appl. Phys. Lett. doi: 10.1063/1.3634052 – volume: 10 start-page: 136 year: 2000 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0005 article-title: Ferroelectric thin films for micro-sensors and actuators: a review publication-title: J. Micromech. Microeng. doi: 10.1088/0960-1317/10/2/307 – volume: 106 start-page: 232905 year: 2015 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0075 article-title: Ferroelectricity in undoped hafnium oxide publication-title: Appl. Phys. Lett. doi: 10.1063/1.4922272 – volume: 22 start-page: 2412 year: 2012 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0090 article-title: Incipient ferroelectricity in Al-doped HfO2 thin films publication-title: Adv. Funct. Mater. doi: 10.1002/adfm.201103119 – volume: 55 start-page: 3081 year: 2007 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0055 article-title: Switching characteristics of MPB compositions of (Bi0.5Na0.5)TiO3–BaTiO3–(Bi0.5K0.5)TiO3 lead-free ferroelectric ceramics publication-title: Acta Mater. doi: 10.1016/j.actamat.2007.01.012 – volume: 106 start-page: 112904 year: 2015 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0100 article-title: Contribution of oxygen vacancies to the ferroelectric behavior of Hf0.5Zr0.5O2 thin films publication-title: Appl. Phys. Lett. doi: 10.1063/1.4915336 – volume: 264 start-page: 463 year: 2004 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0140 article-title: Epitaxial growth of Pt(001) thin films on Si substrates using an epitaxial γ-Al2O3(001) buffer layer publication-title: J. Cryst. Growth doi: 10.1016/j.jcrysgro.2003.12.048 – volume: 14 start-page: 3864 year: 2014 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0045 article-title: Experimental observation of negative capacitance in ferroelectrics at room temperature publication-title: Nano Lett. doi: 10.1021/nl5017255 – volume: 94 start-page: 246802 year: 2005 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0025 article-title: Giant electroresistance in ferroelectric tunnel junctions publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.94.246802 – volume: 3 start-page: 77 year: 2008 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0040 article-title: Nanoelectronics: negative capacitance to the rescue? publication-title: Nat. Nanotechnol. doi: 10.1038/nnano.2008.18 – volume: 90 start-page: 140103 year: 2014 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0115 article-title: Antiferroelectricity in thin-film ZrO2 from first principles publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.90.140103 – volume: 64 start-page: 2511 year: 1994 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0135 article-title: Oriented ferroelectric La-Sr-Co-O/Pb-La-Zr-Ti-O/La-Sr-Co-O heterostructures on [001] Pt/SiO2 Si substrates using a bismuth titanate template layer publication-title: Appl. Phys. Lett. doi: 10.1063/1.111557 – volume: 80 start-page: 296 year: 2005 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0015 article-title: Current status and challenges of ferroelectric memory devices publication-title: Microelectron. Eng. doi: 10.1016/j.mee.2005.04.084 – volume: 72 start-page: 1757 year: 1989 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0155 article-title: Crystal-structure of orthorhombic zirconia in partially stablished zirconia publication-title: J. Am. Ceram. Soc. doi: 10.1111/j.1151-2916.1989.tb06322.x – volume: 1 start-page: N123 year: 2012 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0095 article-title: Ferroelectricity in Gd-doped HfO2 thin films publication-title: ECS J. Solid State Sci. Technol. doi: 10.1149/2.002301jss – volume: 65 start-page: 233106 year: 2002 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0110 article-title: First-principles study of structural, vibrational, and lattice dielectric properties of hafnium oxide publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.65.233106 – volume: 206 start-page: 1285 year: 2002 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0125 article-title: Crystallisation and tetragonal-monoclinic transformation in ZrO2 and HfO2 dielectric thin films publication-title: Key Eng. Mater. doi: 10.4028/www.scientific.net/KEM.206-213.1285 – volume: 8 start-page: 405 year: 2008 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0035 article-title: Use of negative capacitance to provide voltage amplification for low power nanoscale devices publication-title: Nano Lett. doi: 10.1021/nl071804g – volume: 43 start-page: 025404 year: 2010 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0060 article-title: Intricate straining of manganese-doped (Bi0.5Na0.5)TiO3–BaTiO3–(Bi0.5K0.5)TiO3 lead-free ferroelectric ceramics publication-title: J. Phys. D Appl. Phys. doi: 10.1088/0022-3727/43/2/025404 – volume: 97 start-page: 2368 year: 1993 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0065 article-title: Structures of the ferroelectric phases of barium-titanate publication-title: J. Phys. Chem. doi: 10.1021/j100112a043 – volume: 72 start-page: 125341 year: 2005 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0030 article-title: Theoretical current-voltage characteristics of ferroelectric tunnel junctions publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.72.125341 – volume: 92 start-page: 1153 year: 2009 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0050 article-title: Perspective on the development of lead-free piezoceramics publication-title: J. Am. Ceram. Soc. doi: 10.1111/j.1551-2916.2009.03061.x – volume: 7 start-page: 101 year: 2012 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0020 article-title: Solid-state memories based on ferroelectric tunnel junctions publication-title: Nat. Nanotechnol. doi: 10.1038/nnano.2011.213 – volume: 12 start-page: 4318 year: 2012 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0070 article-title: Ferroelectricity in simple binary ZrO2 and HfO2 publication-title: Nano Lett. doi: 10.1021/nl302049k – volume: 102 start-page: 242905 year: 2013 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0150 article-title: Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature publication-title: Appl. Phys. Lett. doi: 10.1063/1.4811483 – volume: 108 start-page: 012906 year: 2016 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0120 article-title: Ferroelectricity emerging in strained (111)-textured ZrO2 thin films publication-title: Appl. Phys. Lett. doi: 10.1063/1.4939660 – volume: 115 start-page: 68 year: 2016 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0130 article-title: Induction of ferroelectricity in nanoscale ZrO2/HfO2 bilayer thin films on Pt/Ti/SiO2/Si substrates publication-title: Acta Mater. doi: 10.1016/j.actamat.2016.05.029 – volume: 246 start-page: 1400 year: 1989 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0010 article-title: Ferroelectric memories publication-title: Science doi: 10.1126/science.246.4936.1400 – volume: 103 start-page: 192904 year: 2013 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0105 article-title: Wake-up effects in Si-doped hafnium oxide ferroelectric thin films publication-title: Appl. Phys. Lett. doi: 10.1063/1.4829064 – volume: 110 start-page: 114113 year: 2011 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0085 article-title: Ferroelectricity in yttrium-doped hafnium oxide publication-title: J. Appl. Phys. doi: 10.1063/1.3667205 – volume: 60 start-page: 14485 year: 1999 ident: 10.1016/j.jeurceramsoc.2016.10.028_bib0145 article-title: Relative stability of ZrO2 and HfO2 structural phases publication-title: Phys. Rev. B doi: 10.1103/PhysRevB.60.14485 |
| SSID | ssj0017099 |
| Score | 2.4750721 |
| Snippet | Large stable ferroelectricity in nanoscale undoped zirconia (ZrO2) thin films prepared without post-annealing has been demonstrated for the first time.... |
| SourceID | crossref elsevier |
| SourceType | Enrichment Source Index Database Publisher |
| StartPage | 1135 |
| SubjectTerms | Atomic layer deposition Ferroelectricity TEM Thin films Zirconia |
| Title | Induction of ferroelectricity in nanoscale ZrO2 thin films on Pt electrode without post-annealing |
| URI | https://dx.doi.org/10.1016/j.jeurceramsoc.2016.10.028 |
| Volume | 37 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV1LS8QwEA6LXvQgPvFNDl6z2zZp2h48yOKyKq6CLoiXkuaBFW2Xbr36253ptrKCB8Fr2oHwZTIzhG--IeRMa6javSxhoZExE2GkWKKMZpBZeOwJZY3D3uHbiRxPxfVT-NQjw64XBmmVbexfxPQmWrcrgxbNwSzPBw8onhbAhYOKwgvjRsdUiAi9vP_5TfPwIy9p9fZChn93wqMNx-vV4gN5pd4BCaR5yT4yvXAy-29JainxjDbJRlsx0ovFprZIzxbbZH1JR3CHKBzA0TQo0NJRZ6uqXIy3yTUU2TQvaKGKcg7HYelzdRfQ-gXWXP72Pqdgc1_TdhqOsRQfZsuPms7Kec0URGGFDeu7ZDq6fByOWTs7gWkhvZrFoXPaGd_pINDGV6jQaDMpnZHCqQgOxSRZrEUC9xNSvMqE0TxQAZexEkL5fI-sFGVh9wm1njNc-2CluEi8IIsAVZ5JzTMUC_MPSNKBlepWWBznW7ylHYPsNV0GOkWg8RsAfUD4t-1sIa_xJ6vz7kzSH86SQh74g_3hP-2PyFqA2b2hoh2Tlbr6sCdQm9TZaeN8p2T14upmPPkCRpfoAw |
| linkProvider | Elsevier |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwpV1LS8QwEA6yHtSD-MS3OXiN2zZptj14WBZlfa2CCuKlpHlgRdulW_-_M7uprOBB8JryQfgmmRnSmW8IOdEasvYgT1lsZMJE3FMsVUYziCw8CYSyxmHv8O1IDp_E1XP8vEAGbS8MllV63z_z6VNv7Ve6ns3uuCi6DyieFsGFg4wiiBPUMV1Edaq4Qxb7l9fD0ffPhF6Qesm9mCGg1R6dlnm9WXwjr9UHkIGVXvIUi71wOPtvcWou9lyskVWfNNL-bF_rZMGWG2RlTkpwkyicwTHtUaCVo87WdTWbcFNoyLNpUdJSldUELGLpS30X0eYV1lzx_jGhgLlvqB-IYyzFt9nqs6HjatIwBY5YYc_6Fnm6OH8cDJkfn8C0kEHDktg57UzodBRpEyoUabS5lM5I4VQP7GLSPNEihSsKUV7lwmgeqYjLRAmhQr5NOmVV2h1CbeAM1yGgFBdpEOU9YJXnUvMc9cLCXZK2ZGXaa4vjiIv3rC0ie8vmic6QaPwGRO8S_o0dzxQ2_oQ6a22S_TgvGYSCP-D3_ok_JkvDx9ub7OZydL1PliMM9tPKtAPSaepPewipSpMf-aP4BTX76rQ |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Induction+of+ferroelectricity+in+nanoscale+ZrO2+thin+films+on+Pt+electrode+without+post-annealing&rft.jtitle=Journal+of+the+European+Ceramic+Society&rft.au=Lin%2C+Bo-Ting&rft.au=Lu%2C+Yu-Wei&rft.au=Shieh%2C+Jay&rft.au=Chen%2C+Miin-Jang&rft.date=2017-03-01&rft.issn=0955-2219&rft.volume=37&rft.issue=3&rft.spage=1135&rft.epage=1139&rft_id=info:doi/10.1016%2Fj.jeurceramsoc.2016.10.028&rft.externalDBID=n%2Fa&rft.externalDocID=10_1016_j_jeurceramsoc_2016_10_028 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0955-2219&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0955-2219&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0955-2219&client=summon |